IRG4PSH71U Datasheet IRG4PSH71UPBF, IRG4PSH71U | P1-P3

IRG4PSH71U

UltraFast Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

PD - 91685

E

C

G

n-channel

Features

• UltraFast switching speed optimized for operating

frequencies 8 to 40kHz in hard switching, 200kHz

in resonant mode soft switching

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency

(minimum switching and conduction losses) than

prior generations

• Industry-benchmark Super-247 package with

higher power handling capability compared to

same footprint TO-247

• Creepage distance increased to 5.35mm

• Generation 4 IGBT's offer highest efficiencies

available

• Maximum power density, twice the power

handling of the TO-247, less space than TO-264

• IGBTs optimized for specific application conditions

• Cost and space saving in designs that require

multiple, paralleled IGBTs

Benefits

V

CES

= 1200V

V

CE(on) typ.

= 2.50V

@V

GE

= 15V, I

C

= 50A

5/24/04

www.irf.com 1

SUPER - 247

Ab

so

l

ute

M

ax

i

mum

R

at

i

ngs

Parameter Max. Units

V

CES

Collector-to-Emitter Voltage 1200 V

I

C

@ T

C

= 25°C

Continuous Collector Current 99 A

I

C

@ T

C

= 100°C

Continuous Collector Current 50

I

CM

P

u

l

se

C

o

ll

ector

C

urrent

200

I

LM

Cl

ampe

d I

n

d

uct

i

ve

L

oa

d

current

200

V

GE

Gate-to-Emitter Voltage ±20 V

E

ARV

R

everse

V

o

l

tage

A

va

l

anc

h

e

E

nergy

150 mJ

P

D

@ T

C

= 25°C

Maximum Power Dissipation 350 W

P

D

@ T

C

= 100°C

Maximum Power Dissipation 140

T

J

Operating Junction and -55 to +150

T

STG

Storage Temperature Range °C

Storage Temperature Range, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Th

erma

l / M

ec

h

an

i

ca

l Ch

aracter

i

st

i

cs

Parameter Min. Typ. Max. Units

R

θJC

Junction-to-Case- IGBT ––

–

––

–

0.36 °C/W

R

θCS

Case-to-Sink, flat, greased surface ––

–

0.24 ––

–

R

θJA

Junction-to-Ambient, typical socket mount ––

–

––

–

38

Recommended Clip Force 20 (2.0) N (kgf)

Wt Weight ––– 6 (0.21) ––– g (oz.)

IRG4PSH71U

2 www.irf.com

Notes:

 Repetitive rating: V

GE

=20V; pulse width limited by maximum junction temperature (figure 20)

 V

CC

=80%(V

CES

), V

GE

=20V, L=10µH, R

G

= 5.0 Ω (figure 13a)

 Pulse width ≤ 80µs; duty factor ≤ 0.1%.

 Pulse width 5.0µs, single shot.

 Repetitive rating; pulse width limited by maximumjunction temperature.

Electrical Characteristics @ T

J

= 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

Collector-to-Emitter Breakdown Voltage

1200 — — V

V

GE

= 0V, I

C

= 250µA

V

(BR)ECS

Emitter-to-Collector Breakdown Voltage 19 — — V

V

GE

= 0V, I

C

= 1.0A

∆

V

(BR)CES

/

∆

T

J

Temperature Coeff. of Breakdown Voltage —0.78—V/°C

V

GE

= 0V, I

C

= 1mA

— 2.52 2.70 V

I

C

= 70A V

GE

= 15V

V

CE(on)

Collector-to-Emitter Saturation Voltage — 3.17 —

I

C

= 140A

See Fig.2, 5

—2.68—

I

C

= 70A, T

J

= 150°C

V

GE(th)

Gate Threshold Voltage 3.0 — 6.0

V

CE

= V

GE

, I

C

= 250µA

∆V

GE(th)

/

∆T

J

Threshold Voltage temp. coefficient — -9.2 — mV/°

C

V

CE

= V

GE

, I

C

= 1.0mA

gfe Forward Transconductance

48 72 — S

V

CE

= 100V, I

C

= 70A

I

CES

Zero Gate Voltage Collector Current — — 500 µA

V

GE

= 0V, V

CE

= 1200V

——2.0

V

GE

= 0V, V

CE

= 10V

— — 5000

V

GE

= 0V, V

CE

= 1200V, T

J

= 150°C

I

GES

Gate-to-Emitter Leakage Current — — ±100 nA

V

GE

= ±20V

Switching Characteristics @ T

J

= 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Total Gate Charge (turn-on) — 370 560

I

C

= 70A

Q

ge

Gate-to-Emitter Charge (turn-on) — 61 24 nC

V

CC

= 400V See Fig.8

Q

gc

Gate-to-Collector Charge (turn-on) — 120 50

V

GE

= 15V

t

d(on)

Turn-On delay time — 51 —

I

C

= 70A, V

CC

= 960V

t

r

Rise time — 70 — ns

V

GE

= 15V, R

G

= 5.0Ω

t

d(off)

Turn-Off delay time — 280 390 Energy losses include "tail"

t

f

Fall time — 170 260 See Fig. 9, 10, 11, 14

E

on

Turn-On Switching Loss — 4.77 —

E

off

Turn-Off Switching Loss — 9.54 — mJ

E

tot

Total Switching Loss — 14.3 15.8

t

d(on)

Turn-On delay time — 49 —

T

J

= 150°C, See Fig. 9, 10, 11, 14

t

r

Rise time — 70 — ns

I

C

= 70A, V

CC

= 960V

t

d(off)

Turn-Off delay time — 390 —

V

GE

= 15V, R

G

= 5.0Ω

t

f

Fall time — 360 — Energy losses include "tail"

E

TS

Total Switching Loss — 25 — mJ

L

E

Internal Emitter Inductance — 13 — nH Measured 5mm from package

C

ies

Input Capacitance — 7280 —

V

GE

= 0V

C

oes

Output Capacitance — 290 — pF

V

CC

= 30V, See Fig.7

C

res

Reverse Transfer Capacitance — 50 — f = 1.0MHz

IRG4PSH71U

www.irf.com 3

0.1 1 10 100

f , Frequency ( kHz )

0

10

20

30

40

50

60

L

o

a

d

C

u

r

e

n

t

(

A

)

For both:

Duty cycle : 50%

Tj = 125°C

Tsink = 90°C

Gate drive as specified

Power Dissipation = 58W

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=I

RMS

of fundamental; for triangular wave, I=I

PK

)

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Triangular wave:

Clamp voltage:

80% of rated

60% of rated

voltage

Ideal diodes

Square wave:

012345

V

CE

, Collector-to-Emitter Voltage (V)

0.1

1

10

100

1000

I

C

,

C

o

l

e

c

t

o

r

-

t

o

E

m

i

t

e

r

C

u

r

e

n

t

(

A

)

V

GE

= 15V

< 60µs PULSE WIDTH

T

J

= 25°C

T

J

= 150°C

4 6 8 10

V

GE,

Gate-to-Emitter Voltage (V)

0.1

1.0

10.0

100.0

1000.0

I

C

,

C

o

l

e

c

t

o

r

-

t

o

-

E

m

i

t

e

r

C

u

r

e

n

t

(

A

)

T

J

= 25°C

T

J

= 150°C

V

CC

= 50V

< 60µs PULSE WIDTH

IRG4PSH71U

IRG4PSH71U

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