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IRG4PSH71U

P1-P3P4-P6P7-P8
IRG4PSH71U
4 www.irf.com
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
1E-005
0.0001
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
2.0
2.5
3.0
3.5
4.0
V
C
E
,
C
o
l
l
e
c
t
o
r
-
t
o
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
I
C
= 140A
V
GE
= 15V
380µs PULSE WIDTH
I
C
= 70A
I
C
= 35A
Ri (°C/W) τi (sec)
0.253 0.009159
0.1057 0.038041
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
R
1
R
1
R
2
R
2
τ
τ
C
Ci i/Ri
Ci= τi/Ri
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
0
20
40
60
80
100
M
a
x
i
m
u
m
D
C
C
o
l
l
e
c
t
o
r
C
u
r
r
e
n
t
(
A
)
V
GE
= 15V
IRG4PSH71U
www.irf.com 5
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
1 10 100 1000
V
CE
, Collector-to-Emitter Voltage (V)
0
2000
4000
6000
8000
10000
12000
14000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coes
Cres
Cies
V
GE
= 0V, f = 1 MHZ
C
ies
= C
ge
+ C
gc
, C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
0 100 200 300 400
Q
G,
Total Gate Charge (nC)
0
4
8
12
16
20
V
G
E
,
G
a
t
e
-
t
o
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
V
CC
= 400V
I
C
= 70A
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
1
10
100
1000
T
o
t
a
l
S
w
i
t
c
h
i
n
g
L
o
s
s
e
s
(
m
J
)
R
G
= 5.0
Ω
V
GE
= 15V
V
CC
= 960V
I
C
= 140A
I
C
= 70A
I
C
= 35A
0 10 20 30 40
R
G
, Gate Resistance (
Ω
)
10
15
20
25
S
w
i
t
c
h
i
n
g
L
o
s
s
e
s
(
m
J
)
V
CC
= 960V
V
GE
= 15V
T
J
= 25°C
I
C
= 70A
IRG4PSH71U
6 www.irf.com
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
20 40 60 80 100 120 140
I
C
, Collector Current (A)
0
10
20
30
40
50
60
70
T
o
t
a
l
S
w
i
t
c
h
i
n
g
L
o
s
s
e
s
(
m
J
)
R
G
= 5.0
Ω
TJ = 150°C
V
GE
= 15V
V
CC
= 960V
1 10 100 1000 10000
V
CE
, Collector-to-Emitter Voltage (V)
1
10
100
1000
I
C
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r
C
u
r
r
e
n
t
(
A
)
V
GE
= 20V
T
J
= 125°
SAFE OPERATING AREA
P1-P3P4-P6P7-P8

IRG4PSH71U

Mfr. #:
Buy IRG4PSH71U
Manufacturer:
Infineon Technologies
Description:
IGBT 1200V 99A 350W SUPER247
Lifecycle:
New from this manufacturer.
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