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NLU2G16CMUTCG

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 6
1 Publication Order Number:
NLU2G16/D
NLU2G16
Dual Non-Inverting Buffer
The NLU2G16 MiniGatet is an advanced high−speed CMOS dual
non−inverting buffer in ultra−small footprint.
The NLU2G16 input and output structures provide protection when
voltages up to 7.0 V are applied, regardless of the supply voltage.
Features
• High Speed: t
PD
= 3.5 ns (Typ) @ V
CC
= 5.0 V
• Low Power Dissipation: I
CC
= 1 mA (Max) at T
A
= 25°C
• Power Down Protection Provided on inputs
• Balanced Propagation Delays
• Overvoltage Tolerant (OVT) Input and Output Pins
• Ultra−Small Packages
• These are Pb−Free Devices
OUT Y1
IN A2
IN A1
OUT Y2
GND
1
2
3
5
4
IN A2
OUT Y2
1
Figure 1. Pinout (Top View)
Figure 2. Logic Symbol
6
V
CC
IN A1
OUT Y1
1
PIN ASSIGNMENT
1
2
3IN A2
IN A1
GND
4
5V
CC
OUT Y2
FUNCTION TABLE
L
H
AY
L
H
6 OUT Y1
MARKING
DIAGRAMS
C, 4, R, E = Device Marking
M = Date Code
www.onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
1
UDFN6
1.2 x 1.0
CASE 517AA
C
M
UDFN6
1.45 x 1.0
CASE 517AQ
UDFN6
1.0 x 1.0
CASE 517BX
1
M
1
M
RE
NLU2G16
www.onsemi.com
2
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage −0.5 to +7.0 V
V
IN
DC Input Voltage −0.5 to +7.0 V
V
OUT
DC Output Voltage −0.5 to +7.0 V
I
IK
DC Input Diode Current V
IN
< GND −20 mA
I
OK
DC Output Diode Current V
OUT
< GND ±20 mA
I
O
DC Output Source/Sink Current ±12.5 mA
I
CC
DC Supply Current Per Supply Pin ±25 mA
I
GND
DC Ground Current per Ground Pin ±25 mA
T
STG
Storage Temperature Range −65 to +150 °C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
T
J
Junction Temperature Under Bias 150 °C
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125°C (Note 2) ±500 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA / JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
Positive DC Supply Voltage 1.65 5.5 V
V
IN
Digital Input Voltage 0 5.5 V
V
OUT
Output Voltage 0 5.5 V
T
A
Operating Free−Air Temperature −55 +125 °C
Dt/DV
Input Transition Rise or Fall Rate V
CC
= 3.3 V ± 0.3 V
V
CC
= 5.0 V ± 0.5 V
0
0
100
20
ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
NLU2G16
www.onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Conditions
V
CC
(V)
T
A
= 25 5C T
A
= +855C
T
A
= −555C to
+1255C
Unit
Min Typ Max Min Max Min Max
V
IH
Low−Level
Input Voltage
1.65 0.75 x
V
CC
0.75 x
V
CC
V
2.3 to
5.5
0.70 x
V
CC
0.70 x
V
CC
V
IL
Low−Level
Input Voltage
1.65 0.25 x
V
CC
0.25 x
V
CC
0.25 x
V
CC
V
2.3 to
5.5
0.30 x
V
CC
0.30 x
V
CC
0.30 x
V
CC
V
OH
High−Level
Output Voltage
V
IN
= V
IH
or V
IL
I
OH
= −50 mA
2.0
3.0
4.5
1.9
2.9
4.4
2.0
3.0
4.5
1.9
2.9
4.4
1.9
2.9
4.4
V
V
IN
= V
IH
or V
IL
I
OH
= −4 mA
I
OH
= −8 mA
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
V
V
OL
Low−Level
Output Voltage
V
IN
= V
IH
or V
IL
I
OL
= 50 mA
2.0
3.0
4.5
0
0
0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
= V
IH
or V
IL
I
OL
= 4 mA
I
OL
= 8 mA
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
I
IN
Input Leakage
Current
0 v V
IN
v 5.5 V 0 to
5.5
±0.1 ±1.0 ±1.0
mA
I
CC
Quiescent
Supply Current
V
IN
= 5.5 V or
GND
5.5 1.0 10 40
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3.0 nS)
Symbol
Parameter
V
CC
(V)
Test
Condition
T
A
= 25 5C T
A
= +855C
T
A
= −555C to
+1255C
Unit
Min Typ Max Min Max Min Max
t
PLH
,
t
PHL
Propagation Delay,
Input A to Output Y
3.0 to
3.6
C
L
= 15 pF 4.5 7.1 8.5 10
ns
C
L
= 50 pF 6.4 10.6 12 14.5
4.5 to
5.5
C
L
= 15 pF 3.5 5.5 6.5 8.0
C
L
= 50 pF 4.5 7.5 8.5 10
C
IN
Input Capacitance 4.0 10 10 10 pF
C
PD
Power Dissipation
Capacitance
(Note 3)
5.0 8.0 pF
3. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation I
CC(OPR)
= C
PD
• V
CC
• f
in
+ I
CC
. C
PD
is used to determine the no−load
dynamic power consumption: P
D
= C
PD
• V
CC
2
• f
in
+ I
CC
• V
CC.
P1-P3P4-P6P7-P7

NLU2G16CMUTCG

Mfr. #:
Buy NLU2G16CMUTCG
Manufacturer:
ON Semiconductor
Description:
Buffers & Line Drivers DUAL BUFFER
Lifecycle:
New from this manufacturer.
Delivery:
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