SGP02N120
SGD02N120, SGI02N120
Power Semiconductors
6 Rev. 2.3 Sep. 07
t, SWITCHING TIMES
0A 2A 4A 6
8
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
t, SWITCHING TIMES
0Ω 50Ω 100Ω 150Ω
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
I
C
, COLLECTOR CURRENT
R
G
, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, T
j
= 150°C,
V
CE
= 800V, V
GE
= +15V/0V, R
G
= 91Ω,
dynamic test circuit in Fig.E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T
j
= 150°C,
V
CE
= 800V, V
GE
= +15V/0V, I
C
= 2A,
dynamic test circuit in Fig.E)
t, SWITCHING TIMES
-50°C 0°C 50°C 100°C 150°C
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
V
GE(th)
, GATE-EMITTER THRESHOLD VOLTAGE
-50°C 0°C 50°C 100°C 150°C
0V
1V
2V
3V
4V
5V
6V
typ.
min.
max.
T
j
, JUNCTION TEMPERATURE
T
j
, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V
CE
= 800V,
V
GE
= +15V/0V, I
C
= 2A, R
G
= 91Ω,
dynamic test circuit in Fig.E)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(I
C
= 0.3mA)