SGP02N120
SGD02N120, SGI02N120
Power Semiconductors
7 Rev. 2.3 Sep. 07
E, SWITCHING ENERGY LOSSES
0A 2A 4A 6
8
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
E
on
*
E
off
E
ts
*
E, SWITCHING ENERGY LOSSES
0Ω 50Ω 100Ω 150Ω
0.0mJ
0.1mJ
0.2mJ
0.3mJ
0.4mJ
0.5mJ
E
ts
*
E
on
*
E
off
I
C
, COLLECTOR CURRENT
R
G
, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
j
= 150°C,
V
CE
= 800V, V
GE
= +15V/0V, R
G
= 91Ω,
dynamic test circuit in Fig.E )
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
j
= 150°C,
V
CE
= 800V, V
GE
= +15V/0V, I
C
= 2A,
dynamic test circuit in Fig.E )
E, SWITCHING ENERGY LOSSES
-50°C 0°C 50°C 100°C 150°C
0.0mJ
0.1mJ
0.2mJ
0.3mJ
0.4mJ
E
ts
*
E
on
*
E
off
Z
thJC
, TRANSIENT THERMAL IMPEDANCE
1µs 10µs 100µs 1ms 10ms 100ms 1
10
-2
K/W
10
-1
K/W
10
0
K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D=0.5
T
j
, JUNCTION TEMPERATURE
t
p
, PULSE WIDTH
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V
CE
= 800V,
V
GE
= +15V/0V, I
C
= 2A, R
G
= 91Ω,
dynamic test circuit in Fig.E )
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = t
p
/ T)
*) E
on
and E
ts
include losses
due to diode recovery.
*) E
on
and E
ts
include losses
due to diode recovery.
*) E
on
and E
ts
include losses
due to diode recovery.
C
1
=
1
/R
1
R
1
R
2
C
2
=
2
/R
2
R ,(K/W)
τ
, (s)
0.66735 0.04691
0.70472 0.00388
0.62778 0.00041
