BTS 7810 K
Data Sheet 10 2003-03-11
Output stages
Inverse diode of high-
side switch; Forward-
voltage
V
FH
–0.81.2VI
FH
= 5 A
Inverse diode of lowside
switch; Forward-voltage
V
FL
–0.81.2VI
FL
= 5 A
Static drain-source
on-resistance of highside
switch
R
DS ON H
– 2635mΩ I
SH
=5A
T
j
= 25 °C
Static drain-source
on-resistance of lowside
switch
R
DS ON L
– 1417mΩ I
SL
=5A;
V
IL
= 5 V
T
j
= 25 °C
Static path on-resistance
R
DS ON
––100mΩ
R
DS ON H
+R
DS ON L
I
SH
=5A;
Short Circuit of highside switch to GND
Initial peak SC current I
SCP H
35 48 65 A T
j
= – 40 °C
Initial peak SC current
I
SCP H
30 42 54 A T
j
= + 25 °C
Initial peak SC current
I
SCP H
25 32 42 A T
j
= + 150 °C
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions.
Protection functions are not designed for continuous or repetitive operation.
Peak SC current is significantly lower at V
S
> 18V
Short Circuit of highside switch to V
S
Output pull-down-resistor
R
O
7 1442kΩ V
DSL
= 3 V
3.3 Electrical Characteristics (cont’d)
I
SH1
= I
SH2
= I
SL1
= I
SL2
= 0 A; – 40 °C < T
j
< 150 °C; 8 V < V
S
< 18 V
unless otherwise specified
Parameter Symb
ol
Limit Values Unit Test Condition
min. typ. max.
