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Document Number: 65902
S11-2042-Rev. B, 17-Oct-11
Vishay Siliconix
SUP90N04-3m3P
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
DS
= 0 V, I
D
= 250 µA
40
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
12.5
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 250 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 40 V, V
GS
= 0 V
1
µA
V
DS
= 40 V, V
GS
= 0 V, T
J
= 125 °C
50
V
DS
= 40 V, V
GS
= 0 V, T
J
= 150 °C
250
On-State Drain Current
a
I
D(on)
V
DS
10 V, V
GS
= 10 V
50 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 22 A
0.0027 0.0033
V
GS
= 4.5 V, I
D
= 20 A
0.0034 0.0041
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A
169 S
Dynamic
b
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= 20 V, f = 1 MHz
5286
pFOutput Capacitance
C
oss
705
Reverse Transfer Capacitance
C
rss
283
Total Gate Charge
c
Q
g
V
DS
= 20 V, V
GS
= 10 V, I
D
= 20 A
87 131
nC
Gate-Source Charge
c
Q
gs
15.3
Gate-Drain Charge
c
Q
gd
12.2
Gate Resistance
R
g
f = 1 MHz 0.5 2.7 5.4
Tur n - O n D e l ay Time
c
t
d(on)
V
DD
= 20 V, R
L
= 2
I
D
10 A, V
GEN
= 10 V, R
g
= 1
11 20
ns
Rise Time
c
t
r
714
Turn-Off Delay Time
c
t
d(off)
45 68
Fall Time
c
t
f
714
Drain-Source Body Diode Ratings and Characteristics T
C
= 25 °C
b
Continuous Current
I
S
90
A
Pulsed Current
I
SM
160
Forward Voltage
a
V
SD
I
F
= 10 A, V
GS
= 0 V
0.72 1.2 V
Reverse Recovery Time
t
rr
I
F
= 10 A, dI/dt = 100 A/µs
42 63 ns
Peak Reverse Recovery Current
I
RM(REC)
2.5 3.8 A
Reverse Recovery Charge
Q
rr
52 78 nC
