Vishay Siliconix
SUP90N04-3m3P
Document Number: 65902
S11-2042-Rev. B, 17-Oct-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65902
.
Single Pulse Avalanche Current Capability vs. Time
1
0.00001 0.0001 0.001 0.01 0.1
10
100
Time (s)
I
DAV
(A)
T
J
= 25 °C
T
J
= 150 °C
Safe Operating Area
0.01
0.1 1 10010
0.1
1
10
1000
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
I
D
- Drain Current (A)
100 μs
1 ms
10 ms
Limited by R
DS(on)
*
100 ms, 1 s
10 s, DC
BVDSS Limited
T
A
= 25 °C
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Case
10
-4
10
-3
10
-2
10
-1
1
1
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Single Pulse
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
