1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol Parameter Value Unit
V
GS
Gate-source voltage ± 25 V
I
D
Drain current (continuous) at T
case
= 25 °C 12
A
Drain current (continuous) at T
case
= 100 °C 7.6
I
DM
Drain current (pulsed) 48 A
P
TOT
Total dissipation at T
case
= 25 °C 90 W
dv/dt
Peak diode recovery voltage slope 40
V/ns
dv/dt
MOSFET dv/dt ruggedness 50
T
stg
Storage temperature –55 to 150
°C
T
j
Maximum junction temperature 150
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
I
SD
≤ 12 A, di/dt ≤ 400 A/µs, V
DS(peak)
< V
(BR)DSS
, V
DD
= 80% V
(BR)DSS
.
(3)
V
DS
≤ 480 V.
Table 3: Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case 1.39
°C/W
R
thj-amb
Thermal resistance junction-ambient 62.5
Table 4: Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Avalanche current, repetitive or not repetitive 2.5 A
E
AR
(2)
Single pulse avalanche energy 380 mJ
Notes:
(1)
Pulse width is limited by T
jmax
.
(2)
starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V.
