Electrical characteristics
2 Electrical characteristics
(T
case
= 25 °C unless otherwise specified)
Table 5: Static
Symbol Parameter Test conditions Min. Typ. Max.
Uni
t
V
(BR)DSS
Drain-source
breakdown voltage
V
GS
= 0 V, I
D
= 1 mA 600
V
I
DSS
Zero gate voltage
drain current
V
GS
= 0 V, V
DS
= 600 V
1.5
µA
V
GS
= 0 V, V
DS
= 600 V,
T
case
= 125 °C
100
I
GSS
Gate-body leakage
current
V
DS
= 0 V, V
GS
= ±25 V
±10 µA
V
GS(th)
Gate threshold
voltage
V
DS
= V
GS
, I
D
= 250 µA 3
4
5 V
R
DS(on)
Static drain-source
on-resistance
V
GS
= 10 V, I
D
= 6 A
0.260 0.295 Ω
Table 6: Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
- 800 -
pF
C
oss
Output capacitance - 40 -
C
rss
Reverse transfer
capacitance
- 1.33 -
C
oss eq.
(1)
Equivalent output
capacitance
V
DS
= 0 to 480 V, V
GS
= 0 V - 80 - pF
R
G
Intrinsic gate
resistance
f = 1 MHz, I
D
= 0 A - 5.6 - Ω
Q
g
Total gate charge
V
DD
= 480 V, I
D
= 12 A,
V
GS
= 10 V (see Figure 14:
"Gate charge test circuit")
- 20 -
nC
Q
gs
Gate-source charge - 5.2 -
Q
gd
Gate-drain charge -
8.5
-
Notes:
(1)
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Table 7: Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time V
DD
= 300 V, I
D
= 6 A
R
G
= 4.7 Ω, V
GS
= 10 V (see
Figure 13: "Switching times
test circuit for resistive load"
and Figure 18: "Switching
time waveform")
- 13.5 -
ns
t
r
Rise time - 8 -
t
d(off)
Turn-off-delay time - 9.5 -
t
f
Fall time -
32.5
-
