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BC847QASZ

P1-P3P4-P6P7-P9P10-P12P13-P14
NXP Semiconductors
BC847QAS
45 V, 100 mA NPN/NPN general-purpose transistor
BC847QAS All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 8 July 2015 3 / 13
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
CBO
collector-base voltage open emitter - 50 V
V
CEO
collector-emitter voltage open base - 45 V
V
EBO
emitter-base voltage open collector - 6 V
I
C
collector current - 100 mA
I
CM
peak collector current - 200 mA
I
BM
peak base current
single pulse; t
p
≤ 1 ms
- 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C [1] - 230 mW
Per device
P
tot
total power dissipation T
amb
≤ 25 °C [1] - 350 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
FR4 PCB, standard footprint
Fig. 2. Per device: Power derating curve
NXP Semiconductors
BC847QAS
45 V, 100 mA NPN/NPN general-purpose transistor
BC847QAS All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 8 July 2015 4 / 13
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
thermal resistance
from junction to
ambient
in free air [1] - - 543 K/W
Per device
R
th(j-a)
thermal resistance
from junction to
ambient
in free air [1] - - 357 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
aaa-007378
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.02
0.01
0
0.05
FR4 PCB, standard footprint
Fig. 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
NXP Semiconductors
BC847QAS
45 V, 100 mA NPN/NPN general-purpose transistor
BC847QAS All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 8 July 2015 5 / 13
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
V
CB
= 30 V; I
E
= 0 A; T
j
= 150 °C - - 5 µAI
CBO
collector-base cut-off
current
V
CB
= 30 V; I
E
= 0 A; T
amb
= 25 °C - - 15 nA
I
EBO
emitter-base cut-off
current
V
EB
= 5 V; I
C
= 0 A; T
amb
= 25 °C - - 100 nA
h
FE
DC current gain V
CE
= 5 V; I
C
= 2 mA; T
amb
= 25 °C 200 - 450
I
C
= 10 mA; I
B
= 0.5 mA; T
amb
= 25 °C - - 100 mVV
CEsat
collector-emitter
saturation voltage
I
C
= 100 mA; I
B
= 5 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
- - 300 mV
I
C
= 10 mA; I
B
= 0.5 mA; T
amb
= 25 °C - 760 - mVV
BEsat
base-emitter saturation
voltage
I
C
= 100 mA; I
B
= 5 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
- 900 - mV
V
CE
= 5 V; I
C
= 2 mA; T
amb
= 25 °C 600 660 725 mVV
BE
base-emitter voltage
V
CE
= 5 V; I
C
= 10 mA; T
amb
= 25 °C - 710 820 mV
C
C
collector capacitance V
CB
= 10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- - 4 pF
C
E
emitter capacitance V
EB
= 0.5 V; I
C
= 0 A; f = 1 MHz;
T
amb
= 25 °C
- 11 - pF
f
T
transition frequency V
CE
= 5 V; I
C
= 10 mA; f = 100 MHz;
T
amb
= 25 °C
100 - - MHz
NF noise figure V
CE
= 5 V; I
C
= 0.2 mA; R
S
= 2 kΩ;
f = 1 MHz; B = 200 Hz; T
amb
= 25 °C
- - 10 dB
P1-P3P4-P6P7-P9P10-P12P13-P14

BC847QASZ

Mfr. #:
Buy BC847QASZ
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 45V 100 mA NPN/NPN general-purpose
Lifecycle:
New from this manufacturer.
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