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BC847QASZ

P1-P3P4-P6P7-P9P10-P12P13-P14
NXP Semiconductors
BC847QAS
45 V, 100 mA NPN/NPN general-purpose transistor
BC847QAS All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 8 July 2015 6 / 13
mgt727
10
-1
1 10 10
2
10
3
I
C
(mA)
0
600
500
400
300
200
100
h
FE
(1)
(2)
(3)
V
CE
= 5 V
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 4. DC current gain as a function of collector
current; typical values
V
CE
(V)
0 542 31
006aab422
0.10
0.05
0.15
0.20
I
C
(A)
0
I
B
(mA) = 4.0
0.8
0.4
3.6
3.2
1.6
2.4
2.8
2.0
1.2
T
amb
= 25 °C
Fig. 5. Collector current as a function of collector-
emitter voltage; typical values
0
1200
1000
800
600
400
200
mgt728
10
- 2
10
- 1
1 10 10
2
10
3
I
C
(mA)
V
BE
(mV)
(1)
(2)
(3)
V
CE
= 5 V
(1) T
amb
= -55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 150 °C
Fig. 6. Base-emitter voltage as a function of collector
current; typical values
006aab423
0.6
0.8
0.4
1.0
1.2
V
BEsat
(V)
0.2
I
C
(mA)
10
- 1
10
3
10
2
1 10
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= -55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 150 °C
Fig. 7. Base-emitter saturation voltage as a function of
collector current; typical values
NXP Semiconductors
BC847QAS
45 V, 100 mA NPN/NPN general-purpose transistor
BC847QAS All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 8 July 2015 7 / 13
10
4
10
3
10
2
10
mgt729
10
- 1
1 10 10
2
10
3
I
C
(mA)
V
CEsat
(mV)
(1)
(2)(3)
I
C
/I
B
= 20
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= -55 °C
Fig. 8. Collector-emitter saturation voltage as a
function of collector current; typical values
006aab424
I
C
(mA)
10
- 1
10
2
101
10
8
10
9
f
T
(Hz)
10
7
T
amb
= 25 °C;
V
CE
= 5 V;
f = 100 MHz
Fig. 9. Transition frequency as a function of collector
current; typical values
NXP Semiconductors
BC847QAS
45 V, 100 mA NPN/NPN general-purpose transistor
BC847QAS All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 8 July 2015 8 / 13
11. Test information
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
12. Package outline
5
32
13-03-05Dimensions in mm
0.34
0.40
0.04
max
0.95
1.05
0.22
0.30
0.125
0.205
1.05
1.15
0.275 0.275
0.32
0.40
0.35 0.35
1
6 4
0.15
0.23
Fig. 10. Package outline DFN1010B-6 (SOT1216)
P1-P3P4-P6P7-P9P10-P12P13-P14

BC847QASZ

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Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 45V 100 mA NPN/NPN general-purpose
Lifecycle:
New from this manufacturer.
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