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DMN2028USS-13

P1-P3P4-P6P7-P7
DMN2028USS
Document number: DS32075 Rev. 4 - 2
1 of 7
www.diodes.com
October 2013
© Diodes Incorporated
DMN2028USS
ADVANCE INFORMATION
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
max
I
D
max
T
A
= +25°C
(Note 6)
20V
20m @ V
GS
= 4.5V
9.8A
28m @ V
GS
= 2.5V
8.3A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Battery charging
Power management functions
DC-DC converters
Portable power adaptors
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Output Leakage
ESD Protected Up to 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DMN2028USS-13 N2028US 13 12 2,500
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Top View Top View
SO-8
D
S
S
S
G
D
D
D
Equivalent Circuit
ESD PROTECTED TO 2kV
Chengdu A/T Site Shanghai A/T Site
= Manufacturer’s Marking
N2028US = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1 4
8 5
N2028US
WW
YY
1 4
8 5
N2028US
WW
YY
D
S
G
Gate Protection
Diode
DMN2028USS
Document number: DS32075 Rev. 4 - 2
2 of 7
www.diodes.com
October 2013
© Diodes Incorporated
DMN2028USS
ADVANCE INFORMATION
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source voltage
V
DSS
20
V
Gate-Source voltage
V
GS
12
Continuous Drain current
V
GS
= 4.5V
(Note 6)
I
D
9.8
A
T
A
= +70°C (Note 6)
7.9
(Note 5) 7.3
Pulsed Drain current
V
GS
= 4.5V
(Note 7)
I
DM
45.0
Continuous Source current (Body diode) (Note 6)
I
S
6.0
Pulsed Source current (Body diode) (Note 7)
I
SM
45.0
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
(Note 5)
P
D
1.56
12.5
W
mW/°C
(Note 6)
2.81
22.5
Thermal Resistance, Junction to Ambient
(Note 5)
R
JA
80.0
°C/W
(Note 6) 44.5
Thermal Resistance, Junction to Lead (Note 8)
R
JL
37.0
Operating and storage temperature range
T
J
, T
STG
-55 to +150 °C
Notes: 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as note (5), except the device is measured at t 10 sec.
7. Same as note (5), except the device is pulsed with D = 0.02 and pulse width 300µs.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
DMN2028USS
Document number: DS32075 Rev. 4 - 2
3 of 7
www.diodes.com
October 2013
© Diodes Incorporated
DMN2028USS
ADVANCE INFORMATION
Thermal Characteristics
100m 1 10
1m
10m
100m
1
10
25mm x 25mm
1oz FR4
Single Pulse
T
amb
=25°C
R
DS(on)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
I
D
Drain Current (A)
V
DS
Drain-Source Voltage (V)
0 20406080100120140160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
25mm x 25mm
1oz FR4
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60
70
80
T
amb
=25°C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse
T
amb
=25°C
Pulse Power Dissipation
Pulse Width (s)
Maximum Power (W)
P1-P3P4-P6P7-P7

DMN2028USS-13

Mfr. #:
Buy DMN2028USS-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET N-Ch FET VDSS 20V VGSS 20V ID 9.8A
Lifecycle:
New from this manufacturer.
Delivery:
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