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DMN2028USS-13

P1-P3P4-P6P7-P7
DMN2028USS
Document number: DS32075 Rev. 4 - 2
4 of 7
www.diodes.com
October 2013
© Diodes Incorporated
DMN2028USS
ADVANCE INFORMATION
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
20 - - V
V
GS
= 0V, I
D
= 250A
Zero Gate Voltage Drain Current
I
DSS
- - 1.0 A
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - ±10 A
V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS
(
th
)
0.6 1.0 1.3 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance (Note 9)
R
DS (ON)
-
11 20
m
V
GS
= 4.5V, I
D
= 9.4A
15 28
V
GS
= 2.5V, I
D
= 8.3A
Forward Transfer Admittance (Note 9 & 10)
|Y
fs
|
- 16 - S
V
DS
= 5V, I
D
= 9.4A
Diode Forward Voltage (Note 9)
V
SD
- 0.7 1.3 V
V
GS
= 0V, I
S
= 1.3A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
- 1000 -
pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 166 -
Reverse Transfer Capacitance
C
rss
- 158 -
Gate Resistance
R
g
- 1.51 -
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (Note 11)
Q
g
- 7.0 -
nC
V
GS
= 2.5V
V
DS
= 10V
I
D
= 9.4A
Total Gate Charge (Note 11)
Q
g
- 11.6 -
V
GS
= 4.5V
Gate-Source Charge (Note 11)
Q
g
s
- 2.7 -
Gate-Drain Charge (Note 11)
Q
g
d
- 3.4 -
Turn-On Delay Time (Note 11)
t
D
(
on
)
- 11.67 -
ns
V
GS
= 4.5V, V
DS
= 10V,
R
G
= 6 , I
D
= 1A
Turn-On Rise Time (Note 11)
t
r
- 12.49 -
Turn-Off Delay Time (Note 11)
t
D
(
off
)
- 35.89 -
Turn-Off Fall Time (Note 11)
t
f
- 12.33 -
Notes: 9. Measured under pulsed conditions. Pulse width 300s; duty cycle 2%
10. For design aid only, not subject to production testing.
11. Switching characteristics are independent of operating junction temperatures.
0
5
10
15
20
25
30
00.511.52
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
I, D
AIN
EN
(A)
D
V = 2.0V
GS
V = 1.8V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 3.5V
GS
V = 4.0V
GS
V = 10V
GS
0 0.5 1 1.5 2 2.5 3
Fig. 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
0
5
10
15
20
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
DMN2028USS
Document number: DS32075 Rev. 4 - 2
5 of 7
www.diodes.com
October 2013
© Diodes Incorporated
DMN2028USS
ADVANCE INFORMATION
0
0.005
0.010
0.015
0.020
0.025
0.030
0 5 10 15 20
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = 4.5V
GS
V = 2.5V
GS
0
0.005
0.010
0.015
0.020
0.025
0.030
0 5 10 15 20
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
0.6
0.8
1.0
1.2
1.4
1.6
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DSON
V = 2.5V
I = 5A
GS
D
V = 4.5V
I = 10A
GS
D
0
0.005
0.010
0.015
0.020
0.025
0.030
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DSON
V = 4.5V
I = 10A
GS
D
V = 2.5V
I = 5A
GS
D
0
0.5
1.0
1.5
2.0
2.5
3.0
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
I = 250µA
D
I = 1mA
D
0
4
8
12
16
20
0 0.2 0.4 0.6 0.8 1.0 1.2
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
I, S
E
E
(A)
S
T = 25°C
A
DMN2028USS
Document number: DS32075 Rev. 4 - 2
6 of 7
www.diodes.com
October 2013
© Diodes Incorporated
DMN2028USS
ADVANCE INFORMATION
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
10
100
1,000
10,000
f = 1MHz
0 5 10 15 20
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
,
A
A
I
AN
E (p
)
C
iss
C
rss
C
oss
0 5 10 15 20
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
I , LEAKA
E
E
(nA)
DSS
10,000
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0
2
4
6
8
10
0 5 10 15 20 25 30
Fig. 11 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
V , GATE-SOURCE VOLTAGE (V)
GS
V = 15V
I = 9.4A
DS
D
SO-8
Dim Min Max
A - 1.75
A1 0.10 0.20
A2 1.30 1.50
A3 0.15 0.25
b 0.3 0.5
D 4.85 4.95
E 5.90 6.10
E1 3.85 3.95
e 1.27 Typ
h - 0.35
L 0.62 0.82

0 8
All Dimensions in mm
Gauge Plane
Seating Plane
Detail ‘A’
Detail ‘A’
E
E1
h
L
D
e
b
A2
A1
A
45
°
7
°~
9
°
A3
0.254
P1-P3P4-P6P7-P7

DMN2028USS-13

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Buy DMN2028USS-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET N-Ch FET VDSS 20V VGSS 20V ID 9.8A
Lifecycle:
New from this manufacturer.
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