IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFN64N50PD2
IXFN64N50PD3
FRED Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
I
F25
T
C
= 115°C 30 A
V
F
I
F
= 30A, Note 1 2.5 2.75 V
T
VJ
= 150°C 1.8 V
I
RM
I
F
= 10A, di
F
/dt = -100A/μs, T
VJ
= 100°C 5.5 11.5 A
t
rr
V
R
= 100V, V
GE
= 0V 200 ns
R
thJC
0.9 C/W
R
thCS
with Heat Transfer Paste 0.25 C/W
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 20V, I
D
= 32A, Note 1 30 50 S
C
iss
9700 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 970 pF
C
rss
30 pF
t
d(on)
30 ns
t
r
25 ns
t
d(off)
85 ns
t
f
22 ns
Q
g(on)
150 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 32A 50 nC
Q
gd
50 nC
R
thJC
0.20 C/W
R
thCS
0.05 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 64 A
I
SM
Repetitive, Pulse Width Limited by T
JM
250 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.5 V
t
rr
200 ns
Q
RM
0.6 C
I
RM
6.0 A
I
F
= 25A, -di/dt = 100A/s
V
R
= 100V,V
GS
= 0V
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 32A
R
G
= 2 (External)
Note 1. Pulse test, t 300s, duty cycle, d 2%.
(M4 screws (4x) supplied)
SOT-227B miniBLOC (IXFN)
