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IXFN64N50PD3

P1-P3P4-P5
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFN64N50PD2
IXFN64N50PD3
IXYS REF: F_64N50P(9J) 4-27-09
Fig. 7. Input Admittance
0
10
20
30
40
50
60
70
80
90
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
0 20 40 60 80 100 120 140
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
40
80
120
160
200
240
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 250V
I
D
= 32A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Maximum Transient Thermal Impedance
0.01
0.1
1
0.0010.010.1110
Pulse Width - Seconds
Z
(th)JC
- ºC / W
© 2013 IXYS CORPORATION, All Rights Reserved
IXFN64N50PD2
IXFN64N50PD3
Figs.13-19 FRED Diode Curves
200 600 10000 400 800
120
140
160
180
200
220
0.00001 0.0001 0.001 0.01 0.1 1
0.001
0.01
0.1
1
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0 200 400 600 800 1000
0
40
80
120
0.0
0.4
0.8
1.2
V
FR
di
F
/dt
V
200 600 10000 400 800
0
10
20
30
40
50
60
100 1000
0
1
2
3
4
5
01234
0
10
20
30
40
50
60
70
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/s
A
V
C
A/s
A/s
t
rr
ns
t
fr
Z
thJC
A/s
s
2
Fig. 15. Peak reverse current I
RM
versus -di
F
/dt
Fig. 14. Reverse recovery charge Q
r
versus -di
F
/dt
Fig. 13. Forward current I
F
versus V
F
Q
r
I
RM
Fig. 16. Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 17. Recovery time t
rr
versus -di
F
/dt
Fig. 18. Peak forward voltage V
FR
and
t
fr
versus di
F
/dt
t
fr
V
FR
Fig. 19 Transient thermal resistance junction to case
Constants for Z
thJC
calculation:
iR
thi
(K/W) t
i
(s)
1 0.465 0.0052
2 0.179 0.0003
3 0.256 0.0397
T
VJ
= 100°C
V
R
= 600V
I
F
= 60A
I
F
= 30A
I
F
=15A
T
VJ
= 100°C
I
F
= 30A
I
F
= 60A
I
F
= 30A
I
F
=15A
T
VJ
= 100°C
V
R
= 600V
T
VJ
= 100°C
V
R
= 600V
I
F
= 60A
I
F
= 30A
I
F
= 15A
T
VJ
= 25°C
T
VJ
=100°C
T
VJ
=150°C
P1-P3P4-P5

IXFN64N50PD3

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MOSFET N-CH 500V 52A SOT-227B
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