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IRF4905STRLPBF

P1-P3P4-P6P7-P9P10-P12
8/5/05
www.irf.com 1
PD - 97034
HEXFET
®
Power MOSFET
Features of this design are a 150°C junction oper-
ating temperature, fast switching speed and im-
proved repetitive avalanche rating . These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of other
applications.
Description
O Advanced Process Technology
O Ultra Low On-Resistance
O 150°C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
O Some Parameters Are Differrent from
IRF4905S
O Lead-Free
Features
IRF4905SPbF
IRF4905LPbF
V
DSS
= -55V
R
DS(on)
= 20mΩ
I
D
= -42A
D
2
Pak
IRF4905SPbF
TO-262
IRF4905LPbF
S
D
G
D
S
D
G
D
GDS
Gate Drain Source
S
D
G
Absolute Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
E
AS (Thermally limited)
Single Pulse Avalanche Energy
mJ
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max.
Units
R
θJC
Junction-to-Case ––– 0.75
R
θJA
Junction-to-Ambient (PCB Mount, steady state) ––– 40
-55 to + 150
300 (1.6mm from case )
10 lbf
in (1.1N m)
170
1.3
± 20
Max.
-70
-44
-280
-42
790
140
See Fig.12a, 12b, 15, 16
IRF4905S/L
2 www.irf.com
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage -55 ––– ––– V
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– -0.054 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 20
mΩ
V
GS(th)
Gate Threshold Voltage -2.0 ––– -4.0 V
gfs Forward Transconductance 19 ––– ––– S
I
DSS
Drain-to-Source Leakage Current ––– ––– -25 µA
––– ––– -200
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
Q
g
Total Gate Charge ––– 120 180
Q
gs
Gate-to-Source Charge ––– 32 ––– nC
Q
gd
Gate-to-Drain ("Miller") Charge ––– 53 –––
t
d(on)
Turn-On Delay Time ––– 20 –––
t
r
Rise Time ––– 99 –––
t
d(off)
Turn-Off Delay Time ––– 51 ––– ns
t
f
Fall Time ––– 64 –––
L
S
Internal Source Inductance ––– 7.5 ––– nH Between lead,
and center of die contact
C
iss
Input Capacitance ––– 3500 –––
C
oss
Output Capacitance ––– 1250 –––
C
rss
Reverse Transfer Capacitance ––– 450 ––– pF
C
oss
Output Capacitance ––– 4620 –––
C
oss
Output Capacitance ––– 940 –––
C
oss
eff.
Effective Output Capacitance ––– 1530 –––
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– -42
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– -280
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– -1.3 V
t
r
r
Reverse Recovery Time ––– 61 92 ns
Q
r
r
Reverse Recovery Charge ––– 150 220 nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
DS
= -25V, I
D
= -42A
I
D
= -42A
V
DS
= -44V
Conditions
V
GS
= -10V
V
GS
= 0V
V
DS
= -25V
ƒ = 1.0MHz
V
GS
= -20V
V
GS
= 20V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -42A, V
GS
= 0V
T
J
= 25°C, I
F
= -42A, V
DD
= -28V
di/dt = -100A/µs
Conditions
V
GS
= 0V, I
D
= -250µA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -42A
V
DS
= V
GS
, I
D
= -250µA
V
DS
= -55V, V
GS
= 0V
V
DS
= -44V, V
GS
= 0V, T
J
= 125°C
V
GS
= 0V, V
DS
= -1.0V, ƒ = 1.0MH
z
V
GS
= 0V, V
DS
= -44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to -44V
V
GS
= -10V
V
DD
= -28V
I
D
= -42A
R
G
= 2.6 Ω
IRF4905S/L
www.irf.com 3
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. Drain Current
0.1 1 10 100 1000
-V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤
60µs PULSE WIDTH
Tj = 25°C
-4.5V
VGS
TOP -15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
0.1 1 10 100 1000
-V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤
60µs PULSE WIDTH
Tj = 150°C
-4.5V
VGS
TOP -15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
3 4 5 6 7 8 9 10 11 12 13 14
-V
GS
, Gate-to-Source Voltage (V)
0.1
1.0
10.0
100.0
1000.0
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
V
DS
= -25V
≤
60µs PULSE WIDTH
T
J
= 25°C
T
J
= 150°C
0 20406080
-I
D,
Drain-to-Source Current (A)
0
10
20
30
40
G
f
s
,
F
o
r
w
a
r
d
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
T
J
= 25°C
T
J
= 150°C
V
DS
= -10V
380µs PULSE WIDTH
P1-P3P4-P6P7-P9P10-P12

IRF4905STRLPBF

Mfr. #:
Buy IRF4905STRLPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT PCh -55V -74A 20mOhm 120nC
Lifecycle:
New from this manufacturer.
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