DC SPECIFICATIONS
AD678J/A/S AD678K/B/T
Parameter Min Typ Max Min Typ Max Units
TEMPERATURE RANGE
J, K Grades 0 +70 0 +70 °C
A, B Grades –40 +85 –40 +85 °C
S, T Grades –55 +125 –55 +125 °C
ACCURACY
Resolution 12 12 Bits
Integral Nonlinearity (INL) ± 1 ±0.7 ± 1 LSB
Differential Nonlinearity (DNL) 12 12 Bits
Unipolar Zero Error (@ +25°C)
1
± 4 ± 2 ± 3 LSB
Bipolar Zero Error (@ +25°C)
1
± 4 ± 3 ± 5 LSB
Gain Error (@ +25°C)
1, 2
± 4 ± 3 ± 6 LSB
Temperature Drift
Unipolar/Bipolar Zero
J, K Grades ± 2 ± 2 ± 4 LSB
A, B Grades ± 4 ± 3 ± 4 LSB
S, T Grades ± 5 ± 4 ± 5 LSB
Gain
3
J, K Grades ± 4 ± 4 ± 6 LSB
A, B Grades ± 7 ± 5 ± 9 LSB
S, T Grades ± 10 ± 8 ± 10 LSB
Gain
4
J, K Grades ± 2 ± 2 ± 4 LSB
A, B Grades ± 4 ± 3 ± 4 LSB
S, T Grades ± 6 ± 5 ± 6 LSB
ANALOG INPUT
Input Ranges
Unipolar Range 0 +10 0 +10 V
Bipolar Range –5 +5 –5 +5 V
Input Resistance 10 10 M
Input Capacitance 10 10 pF
Input Settling Time 1 1 µs
Aperture Delay 10 10 ns
Aperture Jitter 150 150 ps
INTERNAL VOLTAGE REFERENCE
Output Voltage
5
4.98 5.02 4.98 5.02 V
External Load
Unipolar Mode +1.5 +1.5 mA
Bipolar Mode +0.5 +0.5 mA
POWER SUPPLIES
Power Supply Rejection
V
CC
= +12 V ± 5% ± 2 ± 2 LSB
V
EE
= –12 V ± 5% ± 2 ± 2 LSB
V
DD
= +5 V ± 10% ± 2 ± 2 LSB
Operating Current
I
CC
18 20 18 20 mA
I
EE
25 34 25 34 mA
I
DD
812 812mA
Power Consumption 560 745 560 745 mW
NOTES
1
Adjustable to zero.
2
Includes internal voltage reference error.
3
Includes internal voltage reference drift.
4
Excludes internal voltage reference drift.
5
With maximum external load applied.
Specifications subject to change without notice.
AD678
(T
MIN
to T
MAX
, V
CC
= +12 V 5%, V
EE
= –12 V 5%, V
DD
= +5 V 10% unless otherwise noted)
REV. C
–3–
AD678
REV. C
–4–
TIMING SPECIFICATIONS
Parameter Symbol Min Max Units
SC Delay t
SC
50 ns
Conversion Time t
C
3.0 4.4 µs
Conversion Rate
l
t
CR
5 µs
Convert Pulsewidth t
CP
97 ns
Aperture Delay t
AD
520ns
Status Delay t
SD
0 400 ns
Access Time
2, 3
t
BA
10 100 ns
10 57
4
ns
Float Delay
5
t
FD
10 80 ns
Output Delay t
OD
0ns
Format Setup t
FS
47 ns
OE Delay t
OE
0ns
Read Pulsewidth t
RP
97 ns
Conversion Delay t
CD
150 ns
EOCEN Delay t
EO
0ns
NOTES
1
Includes acquisition time.
2
Measured from the falling edge of OE/EOCEN (0.8 V) to the time at which the data lines/EOC cross 2.0 V or 0.8 V. See Figure 3.
3
C
OUT
= 100 pF.
4
C
OUT
= 50 pF.
5
Measured from the rising edge of OE/EOCEN (2.0 V) to the time at which the output voltage changes by 0.5 V. See Figure 3; C
OUT
= 10 pF.
Specifications subject to change without notice.
(All grades, T
MIN
to T
MAX
, V
CC
= +12 V 5%, V
EE
= –12 V 5%, V
DD
= +5 V 10% unless
otherwise noted)
Figure 1. Conversion Timing
Figure 2. EOC Timing
Figure 3. Load Circuit for Bus Timing Specifications
AD678
REV. C
5
ORDERING GUIDE
Model
1
Package Temperature Range Tested and Specified Package Option
2
AD678JN 28-Lead Plastic DIP 0°C to +70°C AC N-28
AD678KN 28-Lead Plastic DIP 0°C to +70°C AC + DC N-28
AD678JD 28-Lead Ceramic DIP 0°C to +70°C AC D-28
AD678KD 28-Lead Ceramic DIP 0°C to +70°C AC + DC D-28
AD678AD 28-Lead Ceramic DIP –40°C to +85°C AC D-28
AD678BD 28-Lead Ceramic DIP –40°C to +85°C AC + DC D-28
AD678AJ 44-Lead Ceramic JLCC –40°C to +85°C AC J-44
AD678BJ 44-Lead Ceramic JLCC –40°C to +85°C AC + DC J-44
AD678SD 28-Lead Ceramic DIP –55°C to +125°C AC D-28
AD678TD 28-Lead Ceramic DIP –55°C to +125°C AC + DC D-28
NOTES
1
For details on grade and package offerings screened in accordance with MIL-STD-883, refer to Analog Devices Military Products Databook or /883 data sheet.
2
N = Plastic DIP; D = Ceramic DIP; J = J-Leaded Ceramic Chip Carrier.
ABSOLUTE MAXIMUM RATINGS*
With
Respect
Specification To Min Max Units
V
CC
AGND –0.3 +18 V
V
EE
AGND –18 +0.3 V
V
CC
V
EE
–0.3 +26.4 V
V
DD
DGND 0 +7 V
AGND DGND –1 +1 V
AIN, REF
IN
AGND V
EE
V
CC
V
Digital Inputs DGND –0.5 +7 V
Digital Outputs DGND –0.5 V
DD
+ 0.3 V
Max Junction
Temperature 175 °C
Operating Temperature
J and K Grades 0 +70 °C
A and B Grades –40 +85 °C
S and T Grades –55 +125 °C
Storage Temperature –65 +150 °C
Lead Temperature
(10 sec max) +300 °C
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
ESD SENSITIVITY
The AD678 features input protection circuitry consisting of large “distributed” diodes and polysilicon
series resistors to dissipate both high energy discharges (Human Body Model) and fast, low energy
pulses (Charged Device Model). Per Method 3015.2 of MIL-STD-883C, the AD678 has been
classified as a Category 1 device.
Proper ESD precautions are strongly recommended to avoid functional damage or performance
degradation. Charges as high as 4000 volts readily accumulate on the human body and test equipment
and discharge without detection. Unused devices must be stored in conductive foam or shunts, and
the foam should be discharged to the destination socket before devices are removed. For further
information on ESD precautions, refer to Analog Devices’ ESD Prevention Manual.
AD678
CS
SC OE EOCEN
SYNC
12/8
EOC
DB11
DB2
DB1
(R/L)
DB0
(HBE)
V
CC
V
EE
V
DD
DGND
OUTPUT
REGISTER
4-BIT FLASH
A/D
CONVERTER
CONTROL LOGIC
CONVERSION
LOGIC
SAMPLE/
HOLD
GAIN
STAGE
12-BIT D/A
CONVERTER
VOLTAGE
REF.
12
12
4
REF
OUT
REF
IN
BIPOFF
AIN
AGND
Functional Block Diagram
WARNING!
ESD SENSITIVE DEVICE

AD678SD/883B

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Analog to Digital Converters - ADC IC 12-BIT 200 kSPS Complete SAMPLING
Lifecycle:
New from this manufacturer.
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