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IS62WV25616BLL-55TI-TR

P1-P3P4-P6P7-P9P10-P12P13-P14
4 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
08/25/2014
IS62WV25616ALL, IS62WV25616BLL
IS62WV25616ALL, POWER SUPPLY CHARACTERISTICS
(1)
(OverOperatingRange)
Symbol Parameter Test Conditions Max. Unit
70
Icc Vdd DynamicOperating Vdd = Max., Com. 25 mA
Supply Current Iout = 0 mA, f = fmaX Ind. 30
Icc1 OperatingSupply Vdd = Max.,CS1 = 0.2V Com. 10 mA
Current WE = Vdd-0.2V Ind. 10
f=1mhz
Isb1 TTLStandbyCurrent Vdd = Max., Com. 0.35 mA
(TTLInputs) VIn = VIh or VIl Ind. 0.35
CS1 = VIh ,f=1MHz
OR
ULBControl
Vdd=Max.,VIn = VIh or VIl
CS1 = VIl, f = 0, UB = VIh, LB = VIh
Isb2 CMOSStandby Vdd = Max., Com. 15 µA
Current(CMOSInputs) CS1
≥
Vdd – 0.2V, Ind. 15
VIn
≥
Vdd – 0.2V, or
VIn
≤
0.2V, f = 0
OR
ULBControl Vdd=Max.,CS1 = VIl,
VIn ≤ 0.2V, f = 0; UB / LB = Vdd – 0.2V
IS62WV25616BLL, POWER SUPPLY CHARACTERISTICS
(1)
(OverOperatingRange)
Symbol Parameter Test Conditions Max. Max. Unit
55 70
Icc VddDynamicOperating Vdd = Max., Com. 40 35 mA
Supply Current Iout = 0 mA, f = fmaX Ind. 45 40
Icc1 OperatingSupply Vdd = Max.,CS1 = 0.2V Com. 15 15 mA
Current WE = Vdd-0.2V Ind. 15 15
f=1mhz
Isb1 TTLStandbyCurrent Vdd = Max., Com. 0.35 0.35 mA
(TTLInputs) VIn = VIh or VIl Ind. 0.35 0.35
CS1 = VIh,f=1MHz
OR
ULBControl
Vdd=Max.,VIn = VIh or VIl
CS1 = VIl, f = 0, UB = VIh, LB = VIh
Isb2 CMOSStandby Vdd = Max., Com. 15 15 µA
Current(CMOSInputs) CS1
≥
Vdd – 0.2V, Ind. 15 15
VIn
≥
Vdd – 0.2V, or typ.
(1)
3
VIn
≤
0.2V, f = 0
OR
ULBControl Vdd=Max.,CS1 = VIl,
VIn ≤ 0.2V, f = 0; UB / LB = Vdd – 0.2V
Note:
1.TypicalvaluesaremeasuredatV
dd=3.0V,Ta = 25
o
C. Not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 5
Rev. F
08/25/2014
IS62WV25616ALL, IS62WV25616BLL
AC TEST CONDITIONS
IS62WV25616ALL IS62WV25616BLL
Parameter (Unit) (Unit)
InputPulseLevel 0.4VtoVdd-0.2V 0.4V to Vdd-0.3V
InputRiseandFallTimes 5ns 5ns
InputandOutputTiming Vref Vref
andReferenceLevel
OutputLoad SeeFigures1and2 SeeFigures1and2
AC TEST LOADS
Figure 1 Figure 2
IS62WV25616ALL IS62WV25616BLL
1.65V-2.2V 2.5V - 3.6V
R1(Ω) 3070 3070
R2(Ω) 3150 3150
VRef 0.9V 1.5V
Vtm 1.8V 2.8V
R1
5 pF
Including
jig and
scope
R2
OUTPUT
VTM
R1
30 pF
Including
jig and
scope
R2
OUTPUT
VTM
CAPACITANCE
(1)
Symbol Parameter Conditions Max. Unit
cIn Input Capacitance VIn = 0V 8 pF
cout Input/OutputCapacitance Vout = 0V 10 pF
Note:
1.Testedinitiallyandafteranydesignorprocesschangesthatmayaffecttheseparameters.
6 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
08/25/2014
IS62WV25616ALL, IS62WV25616BLL
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(OverOperatingRange)
55 ns
70 ns
Symbol Parameter Min. Max. Min. Max. Unit
trc ReadCycleTime 55 — 70 — ns
taa AddressAccessTime — 55 — 70 ns
toha OutputHoldTime 10 — 10 — ns
tacs1 CS1AccessTime — 55 — 70 ns
tdoe OEAccessTime — 25 — 35 ns
thzoe
(2)
OEtoHigh-ZOutput — 20 — 25 ns
tlzoe
(2)
OEtoLow-ZOutput 5 — 5 — ns
thzcs1 CS1toHigh-ZOutput 0 20 0 25 ns
tlzcs1 CS1toLow-ZOutput 10 — 10 — ns
tba LB, UBAccessTime — 55 — 70 ns
thzb LB, UBtoHigh-ZOutput 0 20 0 25 ns
tlzb LB, UBtoLow-ZOutput 0 — 0 — ns
Notes:
1. Testconditionsassumesignaltransitiontimesof5nsorless,timingreferencelevelsof0.9V/1.5V,inputpulselevelsof0.4to
V
dd-0.2V/Vdd-0.3VandoutputloadingspeciedinFigure1.
2. TestedwiththeloadinFigure2.Transitionismeasured±500mVfromsteady-statevoltage.Not100%tested.
P1-P3P4-P6P7-P9P10-P12P13-P14

IS62WV25616BLL-55TI-TR

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Description:
SRAM 4Mb 256Kx16 55ns Async SRAM
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