© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. 1
1 Publication Order Number:
NTMFS4C55N/D
NTMFS4C55N
Power MOSFET
30 V, 78 A, Single N−Channel, SO−8 FL
Features
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
21.7
A
T
A
= 80°C 16.3
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25°C P
D
2.57 W
Continuous Drain
Current R
q
JA
≤ 10 s
(Note 1)
T
A
= 25°C
I
D
34.8
A
T
A
= 80°C 26.0
Power Dissipation
R
q
JA
≤ 10 s (Note 1)
T
A
= 25°C P
D
6.6 W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25°C
I
D
11.9
A
T
A
= 80°C 8.9
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25°C P
D
0.77 W
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25°C
I
D
78
A
T
C
=80°C 58
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25°C P
D
33 W
Pulsed Drain
Current
T
A
= 25°C, t
p
= 10 ms
I
DM
174 A
Current Limited by Package T
A
= 25°C I
Dmax
80 A
Operating Junction and Storage
Temperature
T
J
,
T
STG
−55 to
+150
°C
Source Current (Body Diode) I
S
30 A
Drain to Source dV/dt dV/d
t
7.0 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
GS
= 10 V, I
L
= 41 A
pk
,
L = 0.1 mH, R
GS
= 25 W) (Note 3)
E
AS
84 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at T
J
= 25°C,
V
GS
= 10 V, I
L
= 29 A, E
AS
= 42 mJ.
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
www.onsemi.com
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceabililty
4C55N
AYWZZ
1
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
30 V
3.4 mW @ 10 V
78 A
5.0 mW @ 4.5 V
N−CHANNEL MOSFET
Device Package Shipping
†
ORDERING INFORMATION
NTMFS4C55NT1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4C55NT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
S
S
S
G
D
D
D
D
G (4)
S (1,2,3)
D (5−8)
