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NTMFS4C55NT3G

P1-P3P4-P6P7-P7
NTMFS4C55N
www.onsemi.com
4
TYPICAL CHARACTERISTICS
10 V
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
53210
0
20
40
60
30
70
4.03.53.02.01.51.0
Figure 3. On−Resistance vs. V
GS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
9.08.07.0 106.05.04.03.0
0.002
0.006
0.010
705030 604020
0.004
0.005
0.007
0.008
0.002
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
15012510075250−25−50
0.8
1.0
1.1
1.3
30252015105
10
100
1000
10000
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RES-
ISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
90
10
4 V to 6.5 V
3.6 V
3.2 V
3.0 V
2.8 V
2.6 V
3.8 V
T
J
= 25°C
V
DS
= 5 V
T
J
= 25°C
T
J
= 125°C
T
J
= −55°C
0.008
0.006
I
D
= 30 A
T
J
= 25°C
V
GS
= 4.5 V
T
J
= 25°C
V
GS
= 10 V
50
I
D
= 30 A
V
GS
= 10 V
V
GS
= 0 V
T
J
= 85°C
T
J
= 150°C
T
J
= 125°C
2.5
0.004
0.014
0.012
1.2
1.4
0.7
1.5
50
0.016
80
10
3.4 V
110
120
140
100
130
4
0
20
40
60
30
70
90
10
50
80
110
120
140
100
130
4.50.50
0.020
0.024
0.022
0.018
0.028
0.026
0.003
1.6
1.7
0.9
NTMFS4C55N
www.onsemi.com
5
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) Q
g
, TOTAL GATE CHARGE (nC)
25201510 3050
0
250
1000
1250
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
100101
1
10
100
1000
0.90.80.70.60.50.4
0
2
4
6
8
10
12
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) T
J
, STARTING JUNCTION TEMPERATURE (°C)
1001010.1
0.1
1
10
100
1000
150125100755025
0
5
20
30
C, CAPACITANCE (pF)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
I
D
, DRAIN CURRENT (A)
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
V
GS
= 0 V
T
J
= 25°C
C
iss
C
oss
C
rss
Q
T
Q
gs
Q
gd
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
t
d(off)
t
d(on)
t
r
t
f
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V
0 V < V
GS
< 10 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
100 ms
10 ms
1 ms
dc
I
D
= 29 A
1750
2500
10
15
25
45
500
750
1500
2000
2250
35
40
3000
2750
1.0
0
2
4
6
8
10
0 4 8 121620242832
T
J
= 25°C
V
DD
= 15 V
V
GS
= 10 V
I
D
= 30 A
14
16
18
20
10 ms
0.01
NTMFS4C55N
www.onsemi.com
6
TYPICAL CHARACTERISTICS
Figure 13. Thermal Response
PULSE TIME (sec)
0.010.0010.00010.000010.000001
0.01
0.1
1
10
100
R(t) (°C/W)
0.1 1 10 100 1000
10%
Duty Cycle = 50%
20%
5%
2%
1%
Single Pulse
Figure 14. G
FS
vs. I
D
I
D
(A)
4030100
0
20
100
G
FS
(S)
20 50
40
60 80
60
80
120
70
Figure 15. Avalanche Characteristics
PULSE WIDTH (SECONDS)
1.E−031.E−041.E−061.E−07
1
10
100
I
D
, DRAIN CURRENT (A)
1.E−05
T
A
= 25°C
T
A
= 85°C
P1-P3P4-P6P7-P7

NTMFS4C55NT3G

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Buy NTMFS4C55NT3G
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET SO8FL 30V 78A 3.4MOH
Lifecycle:
New from this manufacturer.
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