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STGP19NC60WD

P1-P3P4-P6P7-P9P10-P12P13-P15
May 2007 Rev 3 1/15
15
STGW19NC60WD
STGP19NC60WD
N-channel 600V - 19A - TO-220 - TO-247
Ultra fast PowerMESH™ IGBT
www.st.com
Features
■ High frequency operation
■ Low C
RES
/ C
IES
ratio (no cross-conduction
susceptibility)
■ Very soft ultra fast recovery antiparallel diode
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix “W” identifies a family
optimized for very high frequency application.
Applications
■ High frequency motor controls, inverters, UPS
■ HF, SMPS and PFC in both hard switch and
resonant topologies
Internal schematic diagram
Type
V
CES
V
CE(sat)
(max)@25°C
I
C
@100°C
STGP19NC60WD 600V < 2.5V 22A
STGW19NC60WD 600V < 2.5V 23A
1
2
3
TO-220
TO-247
Order code
Part number Marking Package Packaging
STGP19NC60WD GP19NC60WD TO-220 Tube
STGW19NC60WD GW19NC60WD TO-247 Tube
Contents STGP19NC60WD - STGW19NC60WD
2/15
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
STGP19NC60WD - STGW19NC60WD Electrical ratings
3/15
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220 TO-247
V
CES
Collector-emitter voltage (V
GS
= 0)
600 V
I
C
(1)
1. Calculated according to the iterative formula:
Collector current (continuous) at T
C
= 25°C
40 42 A
I
C
(1)
Collector current (continuous) at T
C
= 100°C
22 23 A
I
CL
(2)
2. Vclamp=480V, Tj=150°C, R
G
=10Ω, V
GE
=15V
Collector current (pulsed) 35 A
I
F
Diode RMS forward current at T
C
= 25°C
12 A
V
GE
Gate-emitter voltage ±20 V
P
TOT
Total dissipation at T
C
= 25°C
125 W
T
stg
Storage temperature
– 55 to 150 °C
T
j
Operating junction temperature
Table 2. Thermal resistance
Symbol Parameter
Value
Unit
TO-220 TO-247
Rthj-case
Thermal resistance junction-case max 1 0.95 °C/W
Thermal resistance junction-case max diode 2.25 2.5 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W
I
C
T
C
()
T
JMAX
T
C
–
R
THJ C–
V
CESAT MAX()
T
C
I
C
,()×
------------------------------------------------------------------------------------------------------=
P1-P3P4-P6P7-P9P10-P12P13-P15

STGP19NC60WD

Mfr. #:
Buy STGP19NC60WD
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors N Ch 600V 19A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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