Electrical characteristics STGP19NC60WD - STGW19NC60WD
4/15
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-emitter
breakdown voltage
I
C
= 1mA, V
GE
= 0
600 V
V
CE(sat)
Collector-emitter saturation
voltage
V
GE
= 15V, I
C
= 12A
V
GE
= 15V, I
C
=12A,Tc=125°C
2.1
1.8
2.5 V
V
V
GE(th)
Gate threshold voltage
V
CE
= V
GE
, I
C
= 250 µA
3.75 5.75 V
I
CES
Collector cut-off current
(V
GE
= 0)
V
CE
= Max rating,T
C
= 25°C
V
CE
= Max rating,T
C
= 125°C
150
1
µA
mA
I
GES
Gate-emitter leakage
current (V
CE
= 0)
V
GE
= ±20V, V
CE
= 0
±100 nA
g
fs
Forward transconductance
V
CE
= 15V
,
I
C
= 12A
10 S
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
ies
C
oes
C
res
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
CE
= 25V, f = 1MHz,
V
GE
= 0
1180
130
26
pF
pF
pF
Q
g
Q
ge
Q
gc
Total gate charge
Gate-emitter charge
Gate-collector charge
V
CE
= 390V, I
C
= 5A,
V
GE
= 15V,
Figure 16
53
10
21
nC
nC
nC
STGP19NC60WD - STGW19NC60WD Electrical characteristics
5/15
Table 5. Switching on/off (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
(di/dt)
on
Turn-on delay time
Current rise time
Turn-on current slope
V
CC
= 390V, I
C
= 12A
R
G
= 10, V
GE
= 15V,
Figure 17
25
7
1600
ns
ns
A/µs
t
d(on)
t
r
(di/dt)
on
Turn-on delay time
Current rise time
Turn-on current slope
V
CC
= 390V, I
C
= 12A
R
G
= 10, V
GE
= 15V,
Tj = 125°C
Figure 17
25
8
1400
ns
ns
A/µs
t
r
(V
off
)
t
d
(
off
)
t
f
Off voltage rise time
Turn-off delay time
Current fall time
V
CC
= 390V, I
C
= 12A
R
G
= 10, V
GE
= 15V,
Figure 17
22
90
43
ns
ns
ns
t
r
(V
off
)
t
d
(
off
)
t
f
Off voltage rise time
Turn-off delay time
Current fall time
V
CC
= 390V, I
C
= 12A
R
G
= 10, V
GE
= 15V,
Tj = 125°C
Figure 17
47
127
77
ns
ns
ns
Table 6. Switching energy (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
E
on
(1)
E
off
(2)
E
ts
1. Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 15 If the IGBT is offered
in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
= 390V, I
C
= 12A
R
G
= 10, V
GE
= 15V,
Figure 17
81
125
206
µJ
µJ
µJ
E
on
(1)
E
off
(2)
E
ts
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
= 390V, I
C
= 12A
R
G
= 10, V
GE
= 15V,
Tj = 125°C
Figure 17
161
255
416
µJ
µJ
µJ
Electrical characteristics STGP19NC60WD - STGW19NC60WD
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Table 7. Collector-emitter diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
f
Forward on-voltage
I
f
= 12A
I
f
= 12A, Tj = 125°C
1.9
1.5
2.5 V
V
t
rr
Q
rr
I
rrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
f
= 12A,V
R
= 50V,
Tj = 25°C, di/dt = 100 A/µs
Figure 18
31
30
2
ns
nC
A
t
rr
Q
rr
I
rrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
f
= 12A,V
R
= 50V,
Tj =125°C, di/dt = 100A/µs
Figure 18
59
102
4
ns
nC
A

STGP19NC60WD

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors N Ch 600V 19A
Lifecycle:
New from this manufacturer.
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