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Document Number: 67876
S11-2306-Rev. B, 21-Nov-11
Vishay Siliconix
Si1902CDL
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 µA
20 V
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= 250 µA
25
mV/°C
V
GS(th)
Temperature Coefficient ΔV
GS(th)
/T
J
- 2.6
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
0.6 1.5 V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 12 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
1
µA
V
DS
= 20 V, V
GS
= 0 V, T
J
= 85 °C
10
On-State Drain Current
a
I
D(on)
V
DS
≥ 5 V, V
GS
= 4.5 V
2A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 4.5 V, I
D
= 1 A
0.195 0.235
Ω
V
GS
= 2.5 V, I
D
= 0.3 A
0.255 0.306
Forward Transconductance
g
fs
V
DS
= 10 V, I
D
= 1 A
3ms
Dynamic
b
Input Capacitance
C
iss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
62
pFOutput Capacitance
C
oss
20
Reverse Transfer Capacitance
C
rss
7
Total Gate Charge
Q
g
V
DS
= 10 V, V
GS
= 10 V, I
D
= 1 A
23
nC
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 1 A
0.9 1.4
Gate-Source Charge
Q
gs
0.2
Gate-Drain Charge
Q
gd
0.2
Gate Resistance
R
g
f = 1 MHz 2.4 12 24 Ω
Turn-On Delay Time
t
d(on)
V
DD
= 10 V, R
L
= 12.5 Ω
I
D
≅ 0.8 A, V
GEN
= 10 V, R
g
= 1 Ω
48
ns
Rise Time
t
r
13 20
Turn-Off DelayTime
t
d(off)
11 20
Fall Time
t
f
918
Turn-On Delay Time
t
d(on)
V
DD
= 10 V, R
L
= 12.5 Ω
I
D
≅ 0.8 A, V
GEN
= 4.5 V, Rg = 1 Ω
612
Rise Time
t
r
16 24
Turn-Off Delay Time
t
d(off)
13 20
Fall Time
t
f
10 20
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
0.35
A
Pulse Diode Forward Current
a
I
SM
2
Body Diode Voltage
V
SD
I
S
= 0.8 A
0.8 1.2 V
Body Diode Reverse Recovery Time
t
rr
I
F
= 0.8 A, dI/dt = 100 A/µs
24nC
Body Diode Reverse Recovery Charge
Q
rr
816
nsReverse Recovery Fall Time
t
a
5
Reverse Recovery Rise Time
t
b
3