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SI1902CDL-T1-GE3

P1-P3P4-P6P7-P9P10-P11
www.vishay.com
4
Document Number: 67876
S11-2306-Rev. B, 21-Nov-11
Vishay Siliconix
Si1902CDL
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
0.60
0.75
0.90
1.05
1.20
- 50 - 25 0 25 50 75 100 125 150
V
GS(th)
(V)
T
J
-Temperature (°C)
I
D
= 250 μA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
0.1
0.2
0.3
0.4
0.5
1.8 2.6 3.4 4.2 5
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
= 1 A
0
2
4
6
8
10
0.001 0.01 0.1 1 10
Power (W)
Time (s)
Safe Operating Area, Junction-to-Ambient
0.01
0.1
1
10
0.1 1 10 100
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
100 ms
Limited by R
DS(on)
*
1 ms
T
C
= 25 °C
Single Pulse
BVDSS Limited
10 ms
100 μs
DC, 10s, 1s
Document Number: 67876
S11-2306-Rev. B, 21-Nov-11
www.vishay.com
5
Vishay Siliconix
Si1902CDL
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
0.3
0.6
0.9
1.2
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
Power Derating, Junction-to-Foot
0
0.1
0.2
0.3
0.4
0.5
0255075100125150
Power (W)
T
C
- Case Temperature (°C)
Power Derating, Junction-to-Ambient
0.0
0.1
0.2
0.3
0.4
0 255075100125150
Power (W)
T
A
- Ambient Temperature (°C)
www.vishay.com
6
Document Number: 67876
S11-2306-Rev. B, 21-Nov-11
Vishay Siliconix
Si1902CDL
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for
Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67876
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Foot
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
P1-P3P4-P6P7-P9P10-P11

SI1902CDL-T1-GE3

Mfr. #:
Buy SI1902CDL-T1-GE3
Manufacturer:
Vishay
Description:
MOSFET 2N-CH 20V 1.1A SC-70-6
Lifecycle:
New from this manufacturer.
Delivery:
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