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FDMC510P-F106

P1-P3P4-P6
©2010 Semic
onductor Components Industries, LLC.
October-2017, Rev. 3
Public
ation Order Number:
FDMC510P/D
1
FDMC510P P-Channel PowerTrench
®
MOSFET
FDMC510P
P-Channel PowerTrench
®
MOSFET
-20 V, -18 A, 8.0 mΩ
Features
Max r
DS(on)
= 8.0 mΩ at V
GS
= -4.5 V, I
D
= -12 A
Max r
DS(on)
= 9.8 mΩ at V
GS
= -2.5 V, I
D
= -10 A
Max r
DS(on)
= 13 mΩ at V
GS
= -1.8 V, I
D
= -9.3 A
Max r
DS(on)
= 17 mΩ at V
GS
= -1.5 V, I
D
= -8.3 A
High performance trench technology for extremely low r
DS(on)
High power and current handling capability in a widely used
surface mount package
100% UIL Tested
Termination is Lead-free and RoHS Compliant
HBM ESD capability level >2 KV typical (Note 4)
General Description
This P-Channel MOSFET is produced using ON
Semiconductor’s advanced Power Trench
®
process that has
been optimized for r
DS(ON)
, switching performance and
ruggedness.
Applications
Battery Management
Load Switch
Bottom
D
D
D
D
S
S
S
G
Top
Pin 1
MLP 3.3x3.3
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage -20 V
V
GS
Gate to Source Voltage ±8 V
I
D
Drain Current -Continuous T
C
= 25 °C -18
A-Continuous T
A
= 25 °C (Note 1a) -12
-Pulsed -50
E
AS
Single Pulse Avalanche Energy 37 mJ
P
D
Power Dissipation T
C
= 25 °C 41
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.3
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 3
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 53
Device Marking Device Package Reel Size Tape Width Quantity
FDMC510P FDMC510P MLP 3.3X3.3 13 ’’ 12 mm 3000 units
www.onsemi.com
2
FDMC510P P-Channel PowerTrench
®
MOSFET
Electrical Characteristics T
J
= 25 °C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BV
DSS
Drain to Source Breakdown Voltage I
D
= -250 μA, V
GS
= 0 V -20 V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= -250 μA, referenced to 25 °C -12 mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= -16 V, V
GS
= 0 V -1 μA
I
GSS
Gate to Source Leakage Current V
GS
= ±8 V, V
DS
= 0 V ±100 nA
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= -250 μA -0.4 -0.5 -1.0 V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= -250 μA, referenced to 25 °C 3 mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= -4.5 V, I
D
= -12 A 6.4 8.0
mΩ
V
GS
= -2.5 V, I
D
= -10 A 7.6 9.8
V
GS
= -1.8 V, I
D
= -9.3 A 9.2 13
V
GS
= -1.5 V, I
D
= -8.3 A 11 17
V
GS
= -4.5 V, I
D
= -12 A, T
J
= 125 °C 8.5 12
g
FS
Forward Transconductance V
DS
= -5 V, I
D
= -12 A 75 S
C
iss
Input Capacitance
V
DS
= -10 V, V
GS
= 0 V,
f = 1 MHz
5910 7860 pF
C
oss
Output Capacitance 840 1120 pF
C
rss
Reverse Transfer Capacitance 738 1110 pF
t
d(on)
Turn-On Delay Time
V
DD
= -10 V, I
D
= -12 A,
V
GS
= -4.5 V, R
GEN
= 6 Ω
15 27 ns
t
r
Rise Time 34 55 ns
t
d(off)
Turn-Off Delay Time 338 540 ns
t
f
Fall Time 170 272 ns
Q
g(TOT)
Total Gate Charge V
GS
= 0 V to -4.5 V
V
DD
= -10 V,
I
D
= -12 A
83 116 nC
Q
g(TOT)
Total Gate Charge V
GS
= 0 V to -2.5 V 50 70 nC
Q
gs
Gate to Source Charge 6.3 nC
Q
gd
Gate to Drain “Miller” Charge 20.4 nC
V
SD
Source to Drain Diode Forward Voltage
V
GS
= 0 V, I
S
= -12 A (Note 2) -0.70 -1.3
V
V
GS
= 0 V, I
S
= -2 A (Note 2) -0.53 -1.2
t
rr
Reverse Recovery Time
I
F
= -12 A, di/dt = 100 A/μs
35 57 ns
Q
rr
Reverse Recovery Charge 20 32 nC
Notes:
1: R
θJA
is determined with the device mounted on a 1 in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJC
is guaranteed by design while R
θJA
is determined
by the user’s board design.
2: P
ulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3: Starting T
J
= 25
o
C; P-Ch: L = 3 mH, I
AS
= -5 A, V
DD
= -20 V, V
GS
= -4.5 V.
4: No gate overvoltage rating is implied.
a. 53 °C/W when mounted on
a 1 i n
2
pad of 2 oz copper
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper
www.onsemi.com
3
FDMC510P P-Channel PowerTrench
®
MOSFET
Typical Characteristics T
J
= 25 °C unless otherwise noted
Figure 1.
0.00.51.01.52.0
0
10
20
30
40
50
V
GS
= -4.5 V
V
GS
= -1.8 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5%MAX
V
GS
= - 1.5 V
V
GS
= -1.2 V
V
GS
= -2.5 V
-I
D
, DRAIN CURRENT (A)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics Figure 2.
0 1020304050
0
1
2
3
4
5
V
GS
= -1.8 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-I
D
, DRAIN CURRENT (A)
V
GS
= -2.5 V
V
GS
= -1.5 V
V
GS
= -1.2 V
V
GS
= -4.5 V
N o rm al iz ed On -Re s i s t a n c e
vs. Drain Current and Gate Voltage
Figure 3. No r m a li zed On Resi s t a n ce
-75 -50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
I
D
= -12 A
V
GS
= -4.5 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
vs. Junction Temperature
Figure 4.
1.01.52.02.53.03.54.04.5
0
5
10
15
20
25
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= -12 A
r
DS(on)
, DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
O n- Resist ance v s . Gat e to
Source Voltage
Figure 5. Transfer Characteristics
0.0 0.5 1.0 1.5 2.0
0
10
20
30
40
50
V
DS
= -5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
-I
D
, DRAIN CURRENT (A)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.01
0.1
1
10
100
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0 V
-I
S
, REVERSE DRAIN CURRENT (A)
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
S ou rce to Drai n Di ode
Forward Voltage vs. Source Current
P1-P3P4-P6

FDMC510P-F106

Mfr. #:
Buy FDMC510P-F106
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET ST3 20V/8V PCH Power Trench Mosfet
Lifecycle:
New from this manufacturer.
Delivery:
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