FDMC510P-F106

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4
FDMC510P P-Channel PowerTrench
®
MOSFET
Figure 7.
020406080100
0.0
1.5
3.0
4.5
I
D
= -12 A
V
DD
= -12 V
V
DD
= -8 V
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
V
DD
= -10 V
Gate Charge Characteristics Figure 8.
0.1 1 10 20
400
1000
10000
20000
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
C ap a c i t a n c e v s . D r a i n
to Source Voltage
Figure 9.
0.1 1 10 100 1000
1
10
T
J
= 100
o
C
20
T
J
= 25
o
C
T
J
= 125
o
C
t
AV
, TIME IN AVALANCHE (ms)
-I
AS
, AVALANCHE CURRENT (A)
U n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10.
25 50 75 100 125 150
0
10
20
30
40
50
60
V
GS
= -4.5 V
Limited by Package
R
θJC
= 3
o
C/W
V
GS
= -2.5 V
-I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
M a x i m u m C o n t in u o us D r a in
Current vs. Case Temperature
Fig ure 11. Forward Bias Safe
Operat
ing Area
0.01 0.1 1 10 80
0.01
0.1
1
10
100
DC
10 s
1 s
100 ms
10 ms
1 ms
100 us
-I
D
, DRAIN CURRENT (A)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJA
= 125
o
C/W
T
A
= 25
o
C
Figure 12. Single Pulse Maximum
Power Dissipation
10
-4
10
-3
10
-2
10
-1
110
100 1000
0.5
1
10
100
1000
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25
o
C
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
Typical Characteristics T
J
= 25 °C unless otherwise noted
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FDMC510P P-Channel PowerTrench
®
MOSFET
Figure 13.
10
-4
10
-3
10
-2
10
-1
110
100 1000
0.001
0.01
0.1
1
SINGLE PULSE
R
θJA
= 125
o
C/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE,
Z
θJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJA
x R
θJA
+ T
A
Junction-to-Ambient Transient Thermal Response Curve
Typical Characteristics T
J
= 25 °C unless otherwise noted
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FDMC510P-F106

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET ST3 20V/8V PCH Power Trench Mosfet
Lifecycle:
New from this manufacturer.
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