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IXDD504SIA

P1-P3P4-P6P7-P9P10-P12P13-P13
First Release
Features
• Built using the advantages and compatibility
of CMOS and IXYS HDMOS
TM
processes
• Latch-Up Protected up to 4 Amps
• High 4A Peak Output Current
• Wide Operating Range: 4.5V to 30V
• -55°C to +125°C Extended Operating
Temperature
• Ability to Disable Output under Faults
• High Capacitive Load
Drive Capability: 1800pF in <15ns
• Matched Rise And Fall Times
• Low Propagation Delay Time
• Low Output Impedance
• Low Supply Current
• Two Drivers in a Single Package
Applications
• Limiting di/dt under Short Circuit
• Driving MOSFETs and IGBTs
• Motor Controls
• Line Drivers
• Pulse Generators
• Local Power ON/OFF Switch
• Switch Mode Power Supplies (SMPS)
• DC to DC Converters
• Pulse Transformer Driver
• Class D Switching Amplifiers
• Power Charge Pumps
General Description
The IXDD504 and IXDE504 each consist of two 4-Amp
CMOS high speed MOSFET gate drivers for driving the
latest IXYS MOSFETs & IGBTs. Each of the dual outputs
can source and sink 4 Amps of peak current while produc-
ing voltage rise and fall times of less than 15ns. The input
of each driver is TTL or CMOS compatible and is virtually
immune to latch up. Patented* design innovations eliminate
cross conduction and current "shoot-through". Improved
speed and drive capabilities are further enhanced by fast,
matched rise and fall times.
Additionally, each IXDD504 or IXDE504 driver incorporates a
unique ability to disable the output under fault conditions.
When a logical low is forced into the Enable input of a
driver, both of it's final output stage MOSFETs (NMOS and
PMOS) are turned off. As a result, the respective output of
the IXDD504 enters a tristate mode and, with additional
cicuitry, achieves a soft turn-off of the MOSFET/IGBT when
a short circuit is detected. This helps prevent damage that
could occur to the MOSFET/IGBT if it were to be switched
off abruptly due to a dv/dt over-voltage transient.
The IXDD504 and IXDE504 are each available in the 8-Pin
P-DIP (PI) package, the 8-Pin SOIC (SIA) package, and the
8-Lead DFN (D2) package, (which occupies less than 65%
of the board area of the 8-Pin SOIC).
*United States Patent 6,917,227
Ordering Information
Part Number Description
Package
Type
Packing Style
Pack
Qty
Configuration
IXDD504PI 4A Low Side Gate Driver I.C. 8-Pin PDIP Tube 50
IXDD504SIA 4A Low Side Gate Driver I.C. 8-Pin SOIC Tube 94
IXDD504SIAT/R 4A Low Side Gate Driver I.C. 8-Pin SOIC 13” Tape and Reel 2500
IXDD504D2 4A Low Side Gate Driver I.C. 8-Lead DFN 2” x 2” Waffle Pack 56
IXDD504D2T/R 4A Low Side Gate Driver I.C. 8-Lead DFN 13” Tape and Reel 2500
Dual Non-
Inverting
Drivers with
Enable
IXDE504PI 4A Low Side Gate Driver I.C. 8-Pin PDIP Tube 50
IXDE504SIA 4A Low Side Gate Driver I.C. 8-Pin SOIC Tube 94
IXDE504SIAT/R 4A Low Side Gate Driver I.C. 8-Pin SOIC 13” Tape and Reel 2500
IXDE504D2 4A Low Side Gate Driver I.C. 8-Lead DFN 2” x 2” Waffle Pack 56
IXDE504D2T/R 4A Low Side Gate Driver I.C. 8-Lead DFN 13” Tape and Reel 2500
Dual Inverting
Drivers
Inverting with
Enable
DS99568A(10/07)
NOTE: All parts are lead-free and RoHS Compliant
Copyright © 2007 IXYS CORPORATION All rights reserved
IXDD504/ IXDE504
4 Ampere Dual Low-Side Ultrafast MOSFET Drivers
with Enable for fast, controlled shutdown
2
Copyright © 2007 IXYS CORPORATION All rights reserved
IXDD504 / IXDE504
Figure 2 - IXDE504 Dual Inverting + Enable 4A Gate Driver Functional Block Diagram
Figure 1 - IXDD504 Dual Non-Inverting + Enable 4A Gate Driver Functional Block Diagram
* United States Patent 6,917,227
N
P
N
P
OUT A
Vcc
OUT B
IN A
IN B
GND
ANTI-CROSS
CONDUCTION
CIRCUIT *
ANTI-CROSS
CONDUCTION
CIRCUIT *
*
*
EN A
200 K
EN B
200 K
N
P
N
P
OUT A
Vcc
OUT B
IN A
IN B
GND
ANTI-CROSS
CONDUCTION
CIRCUIT *
ANTI-CROSS
CONDUCTION
CIRCUIT *
*
*
EN A
200 K
EN B
200 K
3
IXDD504 / IXDE504
Unless otherwise noted, 4.5V ≤ V
CC
≤ 30V .
All voltage measurements with respect to GND. IXD_504 configured as described in Test Conditions. All specifications are for one channel.
Electrical Characteristics @ T
A
= 25
o
C
(3)
Absolute Maximum Ratings
(1)
Operating Ratings
(2)
Parameter Value
Supply Voltage 35 V
All Other Pins (unless specified -0.3 V to V
CC
+ 0.3V
otherwise)
Junction Temperature 150 °C
Storage Temperature -65 °C to 150 °C
Lead Temperature (10 Sec) 300 °C
Parameter Value
Operating Supply Voltage 4.5V to 30V
Operating Temperature Range -55 °C to 125 °C
(4)
IXYS reserves the right to change limits, test conditions, and dimensions.
Package Thermal Resistance *
8-Pin PDIP (PI)
θ
J-A
(typ) 125 °C/W
8-Pin SOIC (SIA)
θ
J-A
(typ) 200 °C/W
8-Lead DFN (D2)
θ
J-A
(typ) 125-200 °C/W
8-Lead DFN (D2)
θ
J-C
(max) 2.1 °C/W
8-Lead DFN (D2)
θ
J-S
(typ) 6.4 °C/W
Symbol Parameter Test Conditions Min Typ Max Units
V
IH
, V
ENH
High input & EN voltage
4.5V ≤ V
IN
≤ 18V
3 V
V
IL
, V
ENL
Low input & EN voltage
4.5V ≤ V
IN
≤ 18V
0.8 V
V
IN
Input voltage range -5 V
CC
+ 0.3 V
V
EN
Enable voltage range - 0.3 V
CC
+ 0.3 V
I
IN
Input current
0V ≤ V
IN
≤ V
CC
-10 10
µA
V
OH
High output voltage V
CC
- 0.025 V
V
OL
Low output voltage 0.025 V
R
OH
High state output resistance
V
CC
= 18V
I
OUT
= 10mA
1.5 2.5
Ω
R
OL
Low state output resistance
V
CC
= 18V
I
OUT
= 10mA
1.2 2.0
Ω
I
PEAK
Peak output current V
CC
= 15V 4 A
I
DC
Continuous output current
Limited by package
dissipation
1 A
t
R
Rise time
C
LOAD
=1000pF
V
CC
=18V
9 16 ns
t
F
Fall time
C
LOAD
=1000pF
V
CC
=18V
8 14 ns
t
ONDLY
On-time propagation delay
C
LOAD
=1000pF
V
CC
=18V
19 40 ns
t
OFFDLY
Off-time propagation delay
C
LOAD
=1000pF
V
CC
=18V
18 35 ns
t
ENOH
Enable to output high delay time 15 30 ns
t
DOLD
Disable to high impedance state
delay time
63 100 ns
V
CC
Power supply voltage 4.5 18 30 V
R
EN
Enable Pull-up Resistor 200
kΩ
I
CC
Power supply current
V
CC
= 18V, V
IN
= 0V
V
IN
= 3.5V
V
IN
= V
CC
1
20
3
20
µA
mA
mA
P1-P3P4-P6P7-P9P10-P12P13-P13

IXDD504SIA

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Description:
IC GATE DRIVER 4A 8-SOIC
Lifecycle:
New from this manufacturer.
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