IRFI9Z24N

TO-220 FULLPAK
IRFI9Z24N
HEXFET
®
Power MOSFET
PD - 9.1529A
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ -10V - 9.5
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ -10V - 6.7 A
I
DM
Pulsed Drain Current  - 48
P
D
@T
C
= 25°C Power Dissipation 29 W
Linear Derating Factor 0.19 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 96 mJ
I
AR
Avalanche Current -7.2 A
E
AR
Repetitive Avalanche Energy 2.9 mJ
dv/dt Peak Diode Recovery dv/dt  - 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Thermal Resistance
V
DSS
= -55V
R
DS(on)
= 0.175
I
D
= -9.5A
8/25/97
S
D
G
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 5.2
R
θJA
Junction-to-Ambient ––– 65
°C/W
l
Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm
l P-Channel
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial
applications. The moulding compound used provides
a high isolation capability and a low thermal resistance
between the tab and external heatsink. This isolation
is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to
a heatsink using a single clip or by a single screw
fixing.
IRFI9Z24N
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– -1.3 V T
J
= 25°C, I
S
= - 5.4A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 47 71 ns T
J
= 25°C, I
F
= - 7.2A
Q
rr
Reverse RecoveryCharge ––– 84 130 µC di/dt = -100A/µs

t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -55 –– –– V V
GS
= 0V, I
D
= - 250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient –– -0.05 ––– V/°C Reference to 25°C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– –– 0.175 V
GS
= -10V, I
D
= - 5.4A
V
GS(th)
Gate Threshold Voltage -2.0 –– -4.0 V V
DS
= V
GS
, I
D
= - 250µA
g
fs
Forward Transconductance 2.5 ––– ––– S V
DS
= - 25V, I
D
= -7.2A
––– ––– -25
µA
V
DS
= - 55V, V
GS
= 0V
––– ––– -250 V
DS
= - 44V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– –– 100 V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100
nA
V
GS
= - 20V
Q
g
Total Gate Charge –– –– 19 I
D
= -7.2A
Q
gs
Gate-to-Source Charge ––– ––– 5.1 nC V
DS
= - 44V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 10 V
GS
= -10V, See Fig. 6 and 13 
t
d(on)
Turn-On Delay Time ––– 13 ––– V
DD
= -28V
t
r
Rise Time –– 55 –– I
D
= - 7.2A
t
d(off)
Turn-Off Delay Time ––– 23 ––– R
G
= 24
t
f
Fall Time ––– 37 ––– R
D
= 3.7Ω, See Fig. 10 
Between lead,
––– –––
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 350 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 170 ––– pF V
DS
= - 25V
C
rss
Reverse Transfer Capacitance ––– 92 –– ƒ = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance ––– –––
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
-7.2A, di/dt -280A/µs, V
DD
V
(BR)DSS
,
T
J
175°C
Notes:
Starting T
J
= 25°C, L = 3.7mH
R
G
= 25, I
AS
= -7.2A. (See Figure 12)
Pulse width 300µs; duty cycle 2%.
S
D
G
Source-Drain Ratings and Characteristics
A
S
D
G
-9.5
-48
Uses IRF9Z24N data and test conditions
t=60s, ƒ=60Hz
IRFI9Z24N
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
0.1 1 10 100
D
DS
20µs PULSE WIDTH
T = 25°C
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4.5V
c
1
10
100
0.1 1 10 100
D
DS
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4.5V
20µs PULSE WIDTH
T = 175°C
C
1
10
100
45678910
T = 25°C
J
GS
D
A
-I , Drain-to-Source Current (A)
-V , Gate-to-Source Voltage (V)
V = -25V
20µs PULSE WIDTH
DS
T = 175°C
J
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
A
V = -10V
GS
I = -12A
D
T
J
= 25°C
T
J
= 175°C

IRFI9Z24N

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET P-CH 55V 9.5A TO-220FP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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