IRFI9Z24N

IRFI9Z24N
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
4
8
12
16
20
0 5 10 15 20 25
G
GS
A
-V , Gate-to-Source Voltage (V)
Q , Total Gate Charge (nC)
FOR TEST CIRCUIT
SEE FIGURE 13
I = -7.2A
V = -44V
V = -28V
D
DS
DS
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
T = 25°C
T = 150°C
J
J
V = 0V
GS
SD
SD
A
-I , Reverse D rain Current (A)
-V , Source-to-Drain Voltage (V)
1
10
100
1 10 100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10ms
A
-I , Drain Current (A)
-V , Drain-to-Source Voltage (V)
DS
D
10µs
100µs
1ms
T = 25°C
T = 17C
Single Pulse
C
J
0
100
200
300
400
500
600
700
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V , f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
is s
C
oss
C
rss
T
J
= 25°C
IRFI9Z24N
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
V
DS
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
25 50 75 100 125 150 175
0
2
4
6
8
10
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRFI9Z24N
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Q
G
Q
GS
Q
GD
V
G
Charge
-10V
D.U.T.
V
DS
I
D
I
G
-3mA
V
GS
.3µF
50K
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
V
DS
V
DD
DRIVER
A
15V
-20V
0
50
100
150
200
250
25 50 75 100 125 150 175
J
E , Single Pulse Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperature (°C)
I
TOP -2.9A
-5.1A
BOTTOM -7.2A
D

IRFI9Z24N

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET P-CH 55V 9.5A TO-220FP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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