© 2011 IXYS All rights reserved
2 - 8
20110615a
MIEB 101H1200EH
IXYS reserves the right to change limits, test conditions and dimensions.
Output Inverter D1 - D4
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
RRM
max. repetitve reverse voltage
T
VJ
= 25°C 1200 V
I
F25
I
F80
forward current
T
C
= 25°C
T
C
= 80°C
135
90
A
A
V
F
forward voltage
(on chip level)
I
F
= 100 A; V
GE
= 0 V T
VJ
= 25°C
T
VJ
= 125°C
2.00
1.95
2.20
2.25
V
V
I
rr
t
rr
Q
rr
E
rec
max. reverse recovery current
reverse recovery time
inductive load
V
CE
= 600 V; I
C
= 100 A
V
GE
= ±15 V; R
G
= 10 W T
VJ
= 125°C
L
S
= 70 nH
120
330
12.5
4.2
A
ns
µC
mJ
R
thJC
thermal resistance junction to case
(per diode) 0.4 K/W
Ouput Inverter T1 - T4
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
CES
collector emitter voltage
T
VJ
= 25°C 1200 V
V
GES
V
GEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
V
I
C25
I
C80
collector current
T
C
= 25°C
T
C
= 80°C
183
128
A
A
P
tot
total power dissipation
T
C
= 25°C 630 W
V
CE(sat)
collector emitter saturation voltage
(on chip level)
I
C
= 100 A; V
GE
= 15 V T
VJ
= 25°C
T
VJ
= 125°C
1.8
2.0
2.2
2.4
V
V
V
GE(th)
gate emitter threshold voltage
I
C
= 4 mA; V
GE
= V
CE
T
VJ
= 25°C 5 6 7 V
I
CES
collector emitter leakage current
V
CE
= V
CES
; V
GE
= 0 V T
VJ
= 25°C
T
VJ
= 125°C 0.9
0.3
3
mA
mA
I
GES
gate emitter leakage current
V
GE
= ±20 V 200 nA
C
ies
input capacitance
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz 7430 pF
Q
G(on)
total gate charge
V
CE
= 600 V; V
GE
= 15 V; I
C
= 100 A 750 nC
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
rec(off)
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse recovery losses at turn-off
inductive load T
VJ
= 125°C
V
CE
= 600 V; I
C
= 100 A
V
GE
= ±15 V; R
G
= 10 W
L
S
= 70 nH
120
55
460
240
9.5
9.7
4.2
ns
ns
ns
ns
mJ
mJ
mJ
RBSOA
reverse bias safe operating area
V
GE
= ±15 V; R
G
= 10 W;
T
VJ
= 125°C
V
CEK
= 1200 V 200 A
SCSOA
t
SC
short circuit safe operating area
short circuit duration
short circuit current
V
CE
= 900 V; V
GE
= ±10 V; T
VJ
= 125°C
R
G
= 3.9 W; non-repetitive
10 µs
R
thJC
thermal resistance junction to case
(per IGBT) 0.2 K/W
T
C
= 25°C unless otherwise stated
