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MIEB101H1200EH
P1-P3
P4-P6
P7-P8
© 2011 IXYS All rights reser
ved
4 - 8
20110615a
MIEB 101H1200EH
IXYS reserves the right to change limits, test conditions and dimensions.
XXX XX-XXX
XX
YYCWx
Part name
Date Code
Logo
Prod.Index
2D Data Matrix
FOSS-ID 6 digits
Part number
M
= Module
I
= IGBT
E
= SPT
B
= 2nd Generation
101
= Current Rating [A]
H
= H~ Bridge
1200
= Reverse
V
oltage [V]
EH
= E3-Pac
k
Ordering
Part Name
Marking on Product
Delivering Mode
Base Qty
Ordering Code
Standard
MIEB101H1200EH
MIEB101H1200EH
Box
5
510534
Circuit Dia
gram
Outline Drawing
Dimensions in mm (1 mm = 0.0394“)
Product Marking
Remark:
Dimensions without tolerances acc. DIN ISO 2768-T1-m
19
3
4
1
2
9
10
13, 21
15
14, 20
11
12
T1
D1
T2
D2
T3
D3
T4
D4
© 2011 IXYS All rights reser
ved
5 - 8
20110615a
MIEB 101H1200EH
IXYS reserves the right to change limits, test conditions and dimensions.
T
ransistor
T1 -
T4
0
1
2
3
4
5
0
50
100
150
200
250
300
0
2
0
40
60
80
100
120
140
160
180
200
0
5
10
15
20
25
30
0
25
50
75
100
125
150
0
1
2
3
4
5
0
50
100
150
200
250
300
V
CE
[V]
I
C
[A]
Q
G
[nC]
V
GE
[V]
9 V
11 V
5
6
7
8
9
10
11
12
13
0
50
100
150
200
250
0
200
400
600
800
1000
0
5
10
15
20
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
13 V
0
20
40
60
80
100
120
140
160
18
0
200
0
100
200
300
400
500
600
0
4
8
12
16
20
24
E
[mJ]
t
d(off)
Fig. 1 Typ. outpu
t characteristics
V
CE
[V]
I
C
[A]
V
GE
= 15 V
17 V
19 V
Fig. 2 Typ. outp
ut characteristics
I
C
[A]
Fig. 3 Typ. transfer chara
cteristics
V
GE
[V]
Fig. 4 Typ. turn-on gate cha
rge
Fig. 5 Typ. turn-on
energy & sw
itching tim
es
versus collector current
t
f
Fig. 6 Typ. turn-off energy
& switch
ing times
versus collector current
I
C
[A]
E
[mJ]
I
C
[A]
R
G
= 10
Ω
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
V
GE
= 15 V
T
VJ
= 125°C
I
C
= 100 A
V
CE
= 600 V
t
[ns]
t
d(on)
t
r
R
G
= 10
Ω
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
t
[ns]
E
off
E
rec(off)
E
on
© 2011 IXYS All rights reser
ved
6 - 8
20110615a
MIEB 101H1200EH
IXYS reserves the right to change limits, test conditions and dimensions.
0
5
10
15
20
25
30
35
0
2
4
6
8
10
12
0
200
400
600
800
1000
1200
0
5
10
15
20
25
30
35
0
5
10
15
20
0
50
100
150
200
E
[mJ]
E
[mJ]
R
G
[
Ω
]
E
off
Fig. 7 Typ. turn-on
energy and sw
itching times
versus gate resistor
Fig. 8 Typ. turn-off energy
and sw
itching times
versus gate resistor
I
C
= 100 A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
t
[ns]
R
G
[
Ω
]
t
d(off)
t
f
I
C
= 100 A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
t
[ns]
E
rec(off)
t
d (on)
E
on
t
r
T
ransistor
T1 -
T4
P1-P3
P4-P6
P7-P8
MIEB101H1200EH
Mfr. #:
Buy MIEB101H1200EH
Manufacturer:
Littelfuse
Description:
IGBT Modules IGBT Module H Bridge
Lifecycle:
New from this manufacturer.
Delivery:
DHL
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EMS
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