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MRF9210R3

P1-P3P4-P6P7-P9
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MRF9210R3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with fre‐
quencies from 865 to 895 MHz. The high gain and broadband performance of
this device make it ideal for large- signal, common source amplifier applications
in 26 volt base station equipment.
• Typical CDMA Performance @ 880 MHz, 26 Volts, I
DQ
= 1900 mA
IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 40 Watts
Power Gain — 16.5 dB
Efficiency — 25.5%
Adjacent Channel Power —
750 kHz: -46.2 dBc in 30 kHz BW
1.98 MHz: -60 dBc in 30 kHz BW
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 40 Watts CW
Output Power
Features
• Internally Matched for Ease of Use
• Device Designed for Push-Pull Operation Only
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V
DSS
-0.5, +65 Vdc
Gate-Source Voltage V
GS
-0.5, +15 Vdc
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
565
3.2
W
W/°C
Storage Temperature Range T
stg
-65 to +150 °C
Case Operating Temperature T
C
150 °C
Operating Junction Temperature T
J
200 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(1)
Unit
Thermal Resistance, Junction to Case R
θ
JC
0.31 °C/W
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 1 (Minimum)
Machine Model M3 (Minimum)
Charge Device Model C5 (Minimum)
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Document Number: MRF9210
Rev. 6, 9/2008
Freescale Semiconductor
Technical Data
CASE 375G-04, STYLE 1
NI-860C3
MRF9210R3
880 MHz, 200 W, 26 V
LATERAL N-CHANNEL
RF POWER MOSFET
Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
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2
RF Device Data
Freescale Semiconductor
MRF9210R3
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(4)
(V
DS
= 65 Vdc, V
GS
= 0)
I
DSS
— — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(4)
(V
DS
= 26 Vdc, V
GS
= 0)
I
DSS
— — 1 µAdc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0)
I
GSS
— — 1 µAdc
On Characteristics
Gate Threshold Voltage
(1)
(V
DS
= 10 Vdc, I
D
= 330 µAdc)
V
GS(th)
1.5 2.8 4 Vdc
Gate Quiescent Voltage
(3)
(V
DS
= 26 Vdc, I
D
= 1900 mAdc)
V
GS(Q)
2.5 3.3 4.5 Vdc
Drain-Source On-Voltage
(1)
(V
GS
= 10 Vdc, I
D
= 2.2 Adc)
V
DS(on)
— 0.2 0.4 Vdc
Forward Transconductance
(1)
(V
DS
= 10 Vdc, I
D
= 6.7 Adc)
g
fs
— 8.8 — S
Dynamic Characteristics
(1,2)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
— 3.6 — pF
Functional Tests
(3)
(In Freescale Test Fixture, 50 ohm system) Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier,
PAR = 9.8 dB @ 0.01% Probability on CCDF
N-CDMA Common-Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 40 W Avg. N-CDMA, I
DQ
= 1900 mA,
f = 880 MHz)
G
ps
15.8 16.5 — dB
N-CDMA Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 40 W Avg. N-CDMA, I
DQ
= 1900 mA,
f = 880 MHz)
η 23 25.5 — %
Adjacent Channel Power Ratio
(V
DD
= 26 Vdc, P
out
= 40 W Avg. N-CDMA, I
DQ
= 1900 mA,
f = 880 MHz; ACPR @ 40 W, 1.23 MHz Bandwidth,
750 kHz Channel Spacing)
ACPR — -46.2 -45 dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 40 W Avg. N-CDMA, I
DQ
= 1900 mA,
f = 880 MHz)
IRL 9 17.5 — dB
N-CDMA Common-Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 40 W Avg. N-CDMA, I
DQ
= 1900 mA,
f = 865 MHz and 895 MHz)
G
ps
— 16.5 — dB
N-CDMA Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 40 W Avg. N-CDMA, I
DQ
= 1900 mA,
f = 865 MHz and 895 MHz)
η — 25.5 — %
Adjacent Channel Power Ratio
(V
DD
= 26 Vdc, P
out
= 40 W Avg. N-CDMA, I
DQ
= 1900 mA,
f = 865 MHz and 895 MHz; ACPR @ 40 W, 1.23 MHz Bandwidth,
750 kHz Channel Spacing)
ACPR — -47.5 — dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 40 W Avg. N-CDMA, I
DQ
= 1900 mA,
f = 865 MHz and 895 MHz)
IRL — 15 — dB
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push-pull configuration.
4. Drains are tied together internally as this is a total device value.
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MRF9210R3
3
RF Device Data
Freescale Semiconductor
Table 5. 880 MHz Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1, B2 11 Ω RF Beads, Surface Mount (0805) 2508051107Y0 Fair-Rite
Balun 1, Balun 2 0.8-1 GHz Xinger Balun 3A412 Anaren
C1 27 pF Chip Capacitor ATC100B270JT500XT ATC
C2 12 pF Chip Capacitor (0603) 06035J120GBT AVX / Kyocera
C3, C4 3.3 pF Chip Capacitors (0603) 06035J3R3BBT AVX / Kyocera
C5 9.1 pF Chip Capacitor ATC180R9R1JT500XT ATC
C6 4.3 pF Chip Capacitor ATC100B4R3CT500XT ATC
C7 0.4-2.5 pF Variable Capacitor 27283PC Gigatronics
C8 12 pF Chip Capacitor ATC100B120JT500XT ATC
C9, C10 470 µF, 63 V Electrolytic Capacitors EMVY630GTR471MMH05 Nippon
C11, C12, C13, C14 22 µF, 35 V Tantalum Chip Capacitors T491X226K035AT Kemet
C15, C17, C19, C21 0.01 µF, 100 V Chip Capacitors C1825C103J1GAC Kemet
C16, C18 0.56 µF, 50 V Chip Capacitors C1825C564J5GAC Kemet
C20, C22 2.2 µF, 50 V Chip Capacitors C1825C225J5RAC3810 Kemet
C23, C24 47 µF, 16 V Tantalum Chip Capacitors T491D476K016AT Kemet
L1 12 nH Inductor (0603) 0603HC-12NHJBU Coilcraft
L2 22 nH Inductor B07T-5 Coilcraft
L3, L4 12.5 nH Inductors A04T-5 Coilcraft
L5, L6 10 nH Inductors (0603) 0603HC-10NHJBU Coilcraft
R1, R2 24 Ω, 1/4 W Chip Resistors CRCW120624R0FKEA Vishay
Figure 1. 880 MHz Test Circuit Component Layout
MRF9210 Gate MRF9210 Drain
Rev 3
MRF9210
C20
C21
C22
C14
L1
L2
C10
C9
B1
C11
C13
C12
C1
C2
C3
C4
C6
C7
C5
C8
B2
C15
C17
C19
V
GG
V
DD
C23
Balun 1 Balun 2
V
GG
V
DD
C24
L5
L3
L4
R1
R2
C18
C16
L6
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/‐
logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
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MRF9210R3

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Buy MRF9210R3
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors 200W RF LDMOS NI860ML
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