AR
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ARCHIVE INFORMATION
4
RF Device Data
Freescale Semiconductor
MRF9210R3
TYPICAL CHARACTERISTICS
η
900
8
18
860
-55
30
IRL
G
ps
ACPR
f, FREQUENCY (MHz)
Figure 2. Class AB Broadband Circuit
Performance
V
DD
= 26 Vdc
P
out
= 40 W (Avg.)
I
DQ
= 1900 mA
N-CDMA IS-95 Pilot, Sync, Paging
Traffic Codes 8 Through 13
G
ps
, POWER GAIN (dB)
-35
-10
-20
-25
-30
INPUT RETURN LOSS (dB)IRL,
ACPR (dBc)
, DRAINh
EFFICIENCY (%)
-15
17 28
16 26
15 24
14 22
13 -30
12 -35
11 -40
10 -45
9 -50
865 870 875 880 885 890 895
100
14.5
17.5
1
I
DQ
= 2200 mA
1900 mA
P
out
, OUTPUT POWER (WATTS) PEP
Figure 3. Power Gain versus Output Power
G
ps
, POWER GAIN (dB)
V
DD
= 26 Vdc
f1 = 879.95 MHz, f2 = 880.05 MHz
10
17
16.5
16
15.5
15
1600 mA
1300 mA
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Intermodulation Distortion versus
Output Power
INTERMODULATION DISTORTION (dBc)IMD,
100
-90
-1 0
1
7th Order
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion Products
versus Output Power
INTERMODULATION DISTORTION (dBc)IMD,
V
DD
= 26 Vdc, I
DQ
= 1900 mA
f1 = 879.95 MHz, f2 = 880.05 MHz
10
-2 0
-3 0
-4 0
-5 0
-6 0
-7 0
-8 0
5th Order
3rd Order
100
10
22
1
0
60
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 6. Power Gain and Efficiency versus
Output Power
G
ps
, POWER GAIN (dB)
, DRAIN EFFICIENCY (%)η
10
18 40
16 30
14 20
12 10
20 50
V
DD
= 26 Vdc
I
DQ
= 1900 mA
f = 880 MHz
η
G
ps
100
-70
-2 0
1
I
DQ
= 1300 mA
1900 mA
V
DD
= 26 Vdc
f1 = 879.95 MHz, f2 = 880.05 MHz
1600 mA
2200 mA
-3 0
-4 0
-5 0
-6 0
10
