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N25S830HAS22I

P1-P3P4-P6P7-P9P10-P12
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 11
1 Publication Order Number:
N25S830HA/D
N25S830HA
256 kb Low Power Serial
SRAMs
32 k x 8 Bit Organization
Introduction
The ON Semiconductor serial SRAM family includes several
integrated memory devices including this 256 kb serially accessed
Static Random Access Memory, internally organized as 32 k words by
8 bits. The devices are designed and fabricated using
ON Semiconductor’s advanced CMOS technology to provide both
high−speed performance and low power. The devices operate with a
single chip select (CS
) input and use a simple Serial Peripheral
Interface (SPI) serial bus. A single data in and data out line is used
along with a clock to access data within the devices. The N25S830HA
devices include a HOLD
pin that allows communication to the device
to be paused. While paused, input transitions will be ignored. The
devices can operate over a wide temperature range of −40°C to +85°C
and can be available in several standard package offerings.
Features
• Power Supply Range: 2.7 to 3.6 V
• Very Low Standby Current: Typical Isb as low as 1 mA
• Very Low Operating Current: As low as 3 mA
• Simple Memory Control:
Single chip select (CS
)
Serial input (SI) and serial output (SO)
• Flexible Operating Modes:
Word read and write
Page mode (32 word page)
Burst mode (full array)
• Organization: 32 K x 8 bit
• Self Timed Write Cycles
• Built−in Write Protection (CS High)
• HOLD Pin for Pausing Communication
• High Reliability: Unlimited write cycles
• Green SOIC and TSSOP
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
Device Package
ORDERING INFORMATION
N25S830HAS22I SOIC−8
(Pb−Free)
Shipping
†
100 Units / Tube
N25S830HAT22I TSSOP−8
(Pb−Free)
100 Units / Tube
N25S830HAS22IT SOIC−8
(Pb−Free)
3000 / Tape &
Reel
N25S830HAT22IT TSSOP−8
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
TSSOP−8
T SUFFIX
CASE 948AL
MARKING
DIAGRAMS
D125
XXXXYZZ
XXXX = Date Code
Y = Assembly Code
ZZ = Lot Traceability
SOIC−8
S SUFFIX
CASE 751BD
D115
XXXXYZZ
N25S830HA
www.onsemi.com
2
SO
NC
VSS
VCC
SCK
SI
CS
HOLD
VCC
SCK
SI
HOLD
SO
NC
VSS
CS
1
1
SOIC−8
TSSOP−8
Figure 1. Pin Connections
(Top View)
Table 1. DEVICE OPTIONS
Part Number Density
Power
Supply (V)
Speed
(MHz)
Package
Typical Standby
Current
Read/Write
Operating Current
N25S830HAS2
256 Kb 3.0 20
SOIC
1 mA
3 mA @ 1 Mhz
N25S830HAT2 TSSOP
Table 2. PIN NAMES
Pin Name Pin Function
CS Chip Select Input
SCK Serial Clock Input
SI Serial Data Input
SO Serial Data Output
HOLD Hold Input
NC No Connect
V
CC
Power
V
SS
Ground
SRAM
Array
Decode
Logic
Clock
Circuitry
SCK
Data In
Receiver
Data Out
Buffer
Figure 2. Functional Block Diagram
HOLD
CS
SI
SO
N25S830HA
www.onsemi.com
3
Table 3. ABSOLUTE MAXIMUM RATINGS
Item Symbol Rating Unit
Voltage on any pin relative to V
SS
V
IN,OUT
–0.3 to V
CC
+ 0.3 V
Voltage on V
CC
Supply Relative to V
SS
V
CC
–0.3 to 4.5 V
Power Dissipation P
D
500 mW
Storage Temperature T
STG
–40 to 125 °C
Operating Temperature T
A
−40 to +85 °C
Soldering Temperature and Time T
SOLDER
260°C, 10 sec °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Table 4. OPERATING CHARACTERISTICS (Over Specified Temperature Range)
Item Symbol Test Conditions Min
Typ
(Note 1)
Max Unit
Supply Voltage V
CC
2.7 3.6 V
Input High Voltage V
IH
0.7 x V
CC
V
CC
+ 0.3 V
Input Low Voltage V
IL
−0.3 0.8 V
Output High Voltage V
OH
I
OH
= −0.4 mA V
CC
– 0.5 V
Output Low Voltage V
OL
I
OL
= 1 mA 0.2 V
Input Leakage Current I
LI
CS = V
CC
, V
IN
= 0 to V
CC
0.5
mA
Output Leakage Current I
LO
CS = V
CC
, V
OUT
= 0 to V
CC
0.5
mA
Read/Write Operating Current
I
CC1
F = 1 MHz, I
OUT
= 0 3 mA
I
CC2
F = 10 MHz, I
OUT
= 0 6 mA
I
CC3
F = fCLK MAX, I
OUT
= 0 10 mA
Standby Current I
SB
CS = V
CC
, V
IN
= V
SS
or V
CC
1 4
mA
Data Retention Voltage V
DR
1.0 V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
1. Typical values are measured at Vcc = Vcc Typ., T
A
= 25°C and are not 100% tested.
Table 5. CAPACITANCE (Note 2)
Item Symbol Test Condition Min Max Unit
Input Capacitance C
IN
V
IN
= 0 V, f = 1 MHz, T
A
= 25°C 7 pF
I/O Capacitance C
I/O
V
IN
= 0 V, f = 1 MHz, T
A
= 25°C 7 pF
2. These parameters are verified in device characterization and are not 100% tested
P1-P3P4-P6P7-P9P10-P12

N25S830HAS22I

Mfr. #:
Buy N25S830HAS22I
Manufacturer:
ON Semiconductor
Description:
SRAM 256KB 3V SERIAL SRAM
Lifecycle:
New from this manufacturer.
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