N25S830HAS22I

N25S830HA
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7
CS
Instruction
SI
043251698107 11
SCK
15 14 13 12 210
7
6543210
High−Z
16−bit address
Data Out
SO
21 2322 24 28 29 30 3126 2725
000 00 011
Figure 6. Word READ Sequence
CS
Instruction
SI
043251698107 11
SCK
15 14 13 12 210
7
6543210High−Z
16−bit address
Data Out from ADDR 1
SO
21 2322 24 28 29 30 3126 2725
000 00011
7 6543210
Data Out from ADDR 2
7 6543210 7 6543210
...
32 3433 35 39 40 41 4237 3836 43 4544 46 47
Don’t Care
Don’t Care
ADDR 1
Data Out from ADDR n
Figure 7. Page and Burst READ Sequence
Data Out from ADDR 3
N25S830HA
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8
Figure 8. Page READ Sequence
Page X
Word Y
Page XPage X
Word Y+1
Page X
Word 31
Page X
Word 0
Page X
Word 1
SI
SO
Data Words: sequential, at the end of the page the
address wraps back to the beginning of the page
16−bit address
Page address (X)
Word address (Y)
Word Y+2
Figure 9. Burst READ Sequence
Page X
Word Y
Page X
Word 31
Page X
Word Y+1
Page X+1
Word 0
Page X+2
Word 0
Page X+2
Word 1
SI
SO
16−bit address
Page address (X)
Word address (Y)
Data Words: sequential, at the end of the page the address wraps to the beginning
of the page and continues incrementing up to the starting word address. At that
time, the address increments to the next page and the burst continues.
. . .
Page X+1
Word 1
. . .
Page X+1
Word 31
WRITE Operations
The serial SRAM WRITE is selected by enabling CS low.
First, the 8−bit WRITE instruction is transmitted to the
device followed by the 16−bit address with the MSB being
a don’t care. After the WRITE instruction and addresses are
sent, the data to be stored in memory is shifted in on the SI
pin.
If operating in page mode, after the initial word of data is
shifted in, additional data words can be written as long as the
address requested is sequential on the same page. Simply
write the data on SI pin and continue to provide clock pulses.
The internal address pointer is automatically incremented to
the next higher address on the page after each word of data
is written in. This can be continued for the entire page length
of 32 words long. At the end of the page, the addresses
pointer will be wrapped to the 0 word address within the
page and the operation can be continuously looped over the
32 words of the same page. The new data will replace data
already stored in the memory locations.
If operating in burst mode, after the initial word of data is
shifted in, additional data words can be written to the next
sequential memory locations by continuing to provide clock
pulses. The internal address pointer is automatically
incremented to the next higher address after each word of
data is read out. This can be continued for the entire array
and when the highest address is reached (7FFFh), the
address counter wraps to the address 0000h. This allows the
burst write cycle to be continued indefinitely. Again, the new
data will replace data already stored in the memory
locations.
All WRITE operations are terminated by pulling CS
high.
CS
Instruction
SI
043251698107 11
SCK
15 14 13 12 21076543210
High−Z
16−bit address Data In
SO
21 2322 24 28 29 30 3126 2725
000 00010
...
Figure 10. Word WRITE Sequence
N25S830HA
www.onsemi.com
9
CS
Instruction
SI
043251698107 11
SCK
15 14 13 12 21076543210
High−Z
16−bit address
Data In to ADDR 1
SO
21 2322 24 28 29 30 3126 2725
000 00010
7 6543210
Data In to ADDR 2
7 6543210 7 6543210
...
32 3433 35 39 40 41 4237 3836 43 4544 46 47
ADDR 1
Data In to ADDR 3 Data In to ADDR n
High−Z
Figure 11. Page and Burst WRITE Sequence
16−bit address
Page address (X)
Word address (Y)
Page X
Word Y
Page X
Word Y+2
Page X
Word Y+1
Page X
Word 31
Page X
Word 0
Page X
Word 1
SI
SO
Data Words: sequential, at the end of the page the
address wraps back to the beginning of the page
High−Z
Figure 12. Page WRITE Sequence
Page X
Word Y
Page X
Word 31
Page X
Word Y+1
Page X+1
Word 0
Page X+2
Word 0
Page X+2
Word 1
SI
SO
16−bit address
Page address (X)
Word address (Y)
Data Words: sequential, at the end of the page the address wraps to the beginning of the page and
continues incrementing up to the starting word address. At that time, the address increments to the
next page and the burst continues.
. . .
Page X+1
Word 1
. . .
Page X+1
Word 31
High−Z
Figure 13. Burst WRITE Sequence

N25S830HAS22I

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
SRAM 256KB 3V SERIAL SRAM
Lifecycle:
New from this manufacturer.
Delivery:
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