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IS62WV10248DBLL-55TLI

P1-P3P4-P6P7-P9P10-P12P13-P15
4 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
05/11/09
IS62WV10248DALL/BLL, IS65WV10248DALL/BLL
DC ELECTRICAL CHARACTERISTICS (OverOperatingRange)
Symbol Parameter Test Conditions VD D Min. Max. Unit
Vo h OutputHIGHVoltage Io h = -0.1mA 1.65-2.2V 1.4 — V
Io h = -1mA 2.4-3.6V 1.8 — V
Vo L OutputLOWVoltage Io L = 0.1mA 1.65-2.2V — 0.2 V
Io L = 1mA 2.4-3.6V — 0.4 V
VI h InputHIGHVoltage 1.65-2.2V 1.4 Vd d + 0.2 V
2.4-3.6V 2.0 Vd d + 0.3 V
VI L
(1)
InputLOWVoltage
1.65-2.2V –0.2 0.4 V
2.4-3.6V –0.2 0.8 V
IL I InputLeakage GND≤ VIn ≤ Vd d
–1 1 µA
IL o OutputLeakage
GND≤ Vo u t ≤ Vd d , OutputsDisabled –1 1 µA
Notes:
1. V
I L (min.) = –0.3V dC; VI L (min)=-2.0VAC(pulsewidth<10ns).Not100%tested.
V
I h (max.) = Vd d + 0.3V dC; VI h (max) = Vd d +2.0VAC(pulsewidth<10ns).Not100%tested.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
Vt e r m TerminalVoltagewithRespecttoGND –0.2toVd d +0.3 V
tB I A S TemperatureUnderBias –40to+125 °C
Vd d Vd d RelatedtoGND –0.2to+3.8 V
tS t g StorageTemperature –65to+150 °C
Pt PowerDissipation 1.0 W
Note:
1.StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycausepermanentdamagetothe
device.Thisisastressratingonlyandfunctionaloperationofthedeviceattheseoranyotherconditionsabove
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rat-
ing conditions for extended periods may affect reliability.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 5
Rev. A
05/11/09
IS62WV10248DALL/BLL, IS65WV10248DALL/BLL
AC TEST CONDITIONS
Parameter 62WV10248DALL 62WV10248DBLL
(Unit) (Unit)
InputPulseLevel 0.4VtoVd d -0.2 0.4VtoVd d -0.3V
InputRiseandFallTimes 5ns 5ns
InputandOutputTiming Vr e f Vr e f
andReferenceLevel
OutputLoad SeeFigures1and2 SeeFigures1and2
AC TEST LOADS
Figure 1
Figure 2
62W10248DALL 62WV10248DBLL
(1.65V - 2.2V) (2.4V - 3.6V)
r1(Ω) 3070 1029
R2(Ω) 3150 1728
Vr e f 0.9V 1.5V
Vt m 1.8V 3.0V
R1
5 pF
Including
jig and
scope
R2
OUTPUT
VTM
R1
30 pF
Including
jig and
scope
R2
OUTPUT
VTM
6 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
05/11/09
IS62WV10248DALL/BLL, IS65WV10248DALL/BLL
1.65V-2.2V, POWER SUPPLY CHARACTERISTICS
(1)
(OverOperatingRange)
Symbol Parameter Test Conditions Max. Max. Unit
55 70
IC C Vd d DynamicOperating Vd d = Max., Com. 20 20 mA
Supply Current Io u t = 0 mA, f = fm A x Ind. 25 25
Auto. – 35
typ.
(1)
10
IC C 1 OperatingSupply Vd d = Max., CS1 = 0.2V Com. 4 4 mA
Current WE = Vd d – 0.2V Ind. 4 4
CS2 = Vd d – 0.2V, f = 1m h z Au t o . – 4
IS B 2 CMOSStandby Vd d = Max., Com. 20 20 µA
Current(CMOSInputs) CS1
≥
Vd d – 0.2V, Ind. 40 40
CS2
≤ 0.2V, Auto.
–
90
VI n
≥
Vd d – 0.2V, or
typ.
(1)
 4
VIn
≤
0.2V, f = 0
Note:.
1.TypicalvaluesaremeasuredatV
d d =1.8V,TA = 25
o
C and not 100% tested.
P1-P3P4-P6P7-P9P10-P12P13-P15

IS62WV10248DBLL-55TLI

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ISSI
Description:
SRAM 8M (1Mx8) 55ns Async SRAM
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