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NTHD4P02FT1G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 7
1 Publication Order Number:
NTHD4P02F/D
NTHD4P02F
Power MOSFET and
Schottky Diode
−20 V, −3.0 A, Single P−Channel with
3.0 A Schottky Barrier Diode, ChipFETt
Features
• Leadless SMD Package Featuring a MOSFET and Schottky Diode
• 40% Smaller than TSOP−6 Package with Similar Thermal
Characteristics
• Independent Pinout to each Device to Ease Circuit Design
• Ultra Low VF Schottky
• Pb−Free Package is Available
Applications
• Li−Ion Battery Charging
• High Side DC−DC Conversion Circuits
• High Side Drive for Small Brushless DC Motors
• Power Management in Portable, Battery Powered Products
MOSFET MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Value Units
Drain−to−Source Voltage V
DSS
−20 V
Gate−to−Source Voltage V
GS
±12 V
Continuous Drain
Current
Steady
State
T
J
= 25°C
I
D
−2.2
A
T
J
= 85°C −1.6
t v 5 s T
J
= 25°C I
D
−3.0 A
Pulsed Drain
Current
t
p
= 10 ms
I
DM
−9.0 A
Power Dissipation
Steady
State
T
J
= 25°C
P
D
1.1
W
T
J
= 85°C 0.6
t v 5 s T
J
= 25°C 2.1
Continuous Source Current (Body Diode) I
S
−2.1 A
Operating Junction and Storage
Temperature
T
J
, T
STG
−55 to 150 °C
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
SCHOTTKY DIODE MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter Symbol Value Units
Peak Repetitive Reverse Voltage V
RRM
20 V
DC Blocking Voltage V
R
20 V
Average Rectified
Forward Current
Steady
State
T
J
= 25°C
I
F
2.2 A
t v 5 s 3.0 A
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Device Package Shipping
†
ORDERING INFORMATION
NTHD4P02FT1 ChipFET 3000/Tape & Ree
l
ChipFET
CASE 1206A
STYLE 3
PIN CONNECTIONS
MARKING
DIAGRAM
1
2
3
4
8
7
6
5
http://onsemi.com
G
D
P−Channel MOSFET
S
C
A
SCHOTTKY DIODE
8
7
6
54
3
2
1
C
C
D
D
A
A
S
G
NTHD4P02FT1G ChipFET
(Pb−free)
3000/Tape & Ree
l
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
−20 V
20 V
200 mW @ −2.5 V
−130 mW @ −4.5 V
0.510 V
R
DS(on)
TYP
−3.0 A
3.0 A
I
D
MAXV
(BR)DSS
MOSFET
SCHOTTKY DIODE
V
R
MAX I
F
MAXV
F
TYP
C3 M
G
C3 = Specific Device Code
M = Month Code
G = Pb−Free Package
NTHD4P02F
http://onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Units
Junction−to−Ambient (Note 1)
Steady State
T
J
= 25°C
R
q
JA
110
°C/W
t v 5 s 60
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq [1 oz] including traces).
MOSFET ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= −250 mA
−20 −23 V
Zero Gate Voltage Drain Current I
DSS
V
DS
= −16 V, V
GS
= 0 V, T
J
= 25°C
−1.0
mA
V
DS
= −16 V, V
GS
= 0 V, T
J
= 85°C
−5.0
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±12 V ±100 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= −250 mA
−0.6 −0.75 −1.2 V
Drain−to−Source On− Resistance R
DS(on)
V
GS
= −4.5, I
D
= −2.2 A 0.130 0.155
W
V
GS
= −2.5, I
D
= −1.7 A 0.200 0.240
Forward Transconductance g
FS
V
DS
= −10 V, I
D
= −1.7 A 5.0 S
CHARGES AND CAPACITANCES
Input Capacitance C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= −10 V
185 300
pF
Output Capacitance C
OSS
95 150
Reverse Transfer Capacitance C
RSS
30 50
Total Gate Charge Q
G(TOT)
V
GS
= −4.5 V, V
DS
= −10 V,
I
D
= −2.2 A
3.0 6.0
nC
Threshold Gate Charge Q
G(TH)
0.2
Gate−to−Source Charge Q
GS
0.5
Gate−to−Drain Charge Q
GD
0.9
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time t
d(ON)
V
GS
= −4.5 V, V
DD
= −16 V,
I
D
= −2.2 A, R
G
= 2.5 W
7.0 12
ns
Rise Time t
r
13 25
Turn−Off Delay Time t
d(OFF)
33 50
Fall Time t
f
27 40
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 2)
Forward Diode Voltage V
SD
V
GS
= 0 V,
I
S
= −2.1 A
−0.85 −1.15 V
Reverse Recovery Time tRR
V
GS
= 0 V, I
S
= −2.1 A ,
dI
S
/dt = 100 A/ms
32
ns
Charge Time ta 10
Discharge Time tb 22
Reverse Recovery Charge QRR 15 nC
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Units
Maximum Instantaneous Forward Voltage V
F
I
F
= 0.1 A 0.425
V
I
F
= 0.5 A 0.480
I
F
= 1.0 A 0.510 0.575
Maximum Instantaneous Reverse Current I
R
V
R
= 10 V 1.0
mA
V
R
= 20 V 5.0
Maximum Voltage Rate of Change dv/dt V
R
= 20 V 10,000 V/ns
Non−Repetitive Peak Surge Current I
FSM
Halfwave, Single Pulse, 60 Hz 23 A
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
NTHD4P02F
http://onsemi.com
3
TYPICAL MOSFET PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
−2 V
100°C
0
4
5
3
632
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−I
D,
DRAIN CURRENT (AMPS)
2
1
0
1
Figure 1. On−Region Characteristics
0.5
4
21.5 2.5
3
2
1
1
0
3
Figure 2. Transfer Characteristics
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.1
35
0.3
0.2
0
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (
W
)
−I
D,
DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
−I
D,
DRAIN CURRENT (AMPS)
−50 0−25 25
1.4
1.2
1
0.8
0.6
50 125100
Figure 5. On−Resistance Variation with
Temperature
−T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
0.5
24
T
C
= −55°C
I
D
= −2.1 A
T
J
= 25°C
75 150
I
D
= −2.1 A
V
GS
= −4.5 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
4
25°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
1.6
−1.2 V
16
24 8
10
2
0
16
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
12
V
GS
= 0 V
−I
DSS
, LEAKAGE (A)
T
J
= 150°C
T
J
= 100°C
−1.4 V
−1.6 V
−1.8 V
100
1000
10000
78
−2.2 V
V
DS
≥ −10 V
0.4
610 1814
V
GS
= −2.4 V
V
GS
= −6 V to −3 V
0.1
0.125
0.15
0.175
0.2
0.225
0.5 1.5 2.5 3.5
0.25
T
J
= 25°C
V
GS
= −4.5 V
V
GS
= −2.5 V
P1-P3P4-P6P7-P7

NTHD4P02FT1G

Mfr. #:
Buy NTHD4P02FT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET -20V -3A P-Channel w/3A Schottky
Lifecycle:
New from this manufacturer.
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