2002 Oct 28 3
NXP Semiconductors Product data sheet
PNP transistor/Schottky diode module PMEM4010PD
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
NPN transistor
V
CBO
collector-base voltage open emitter − −40 V
V
CEO
collector-emitter voltage open base − −40 V
V
EBO
emitter-base voltage open collector − −5 V
I
C
collector current (DC) − −1 A
I
CM
peak collector current − −2 A
I
BM
peak base current − −1 A
T
j
junction temperature − 150 °C
Schottky barrier diode
V
R
continuous reverse voltage − 20 V
I
F
continuous forward current − 1 A
I
FSM
non repetitive peak forward current t = 8.3 ms half sinewave;
JEDEC method
− 5 A
T
j
junction temperature − 125 °C
Combined device
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 600 mW
T
stg
storage temperature −65 +150 °C
T
amb
operating ambient temperature −65 +125 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air; note 1 208 K/W
