2002 Oct 28 4
NXP Semiconductors Product data sheet
PNP transistor/Schottky diode module PMEM4010PD
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 µs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
NPN transistor
I
CBO
collector-base cut-off current V
CB
= −40 V; I
E
= 0 − − −100 nA
V
CB
= −40 V; I
E
= 0;
T
amb
= 150 °C
− − −50 µA
I
CEO
collector-emitter cut-off current V
CE
= −30 V; I
B
= 0 − − −100 nA
I
EBO
emitter-base cut-off current V
EB
= −5 V; I
C
= 0 − − −100 nA
h
FE
DC current gain V
CE
= −5 V; I
C
= −1 mA 300 − −
V
CE
= −5 V; I
C
= −100 mA 300 − 800
V
CE
= −5 V; I
C
= −500 mA 250 − −
V
CE
= −5 V; I
C
= −1 A 160 − −
V
CEsat
collector-emitter saturation voltage I
C
= −100 mA; I
B
= −1 mA − − −140 mV
I
C
= −500 mA; I
B
= −50 mA − − −170 mV
I
C
= −1 A; I
B
= −100 mA − − −310 mV
V
BEsat
base-emitter saturation voltage I
C
= −1 A; I
B
= −50 mA − − −1.1 V
R
CEsat
equivalent on-resistance I
C
= −500 mA; I
B
= −50 mA;
note
1
− 300 <340 mΩ
V
BEon
base-emitter turn-on voltage V
CE
= −5 V; I
C
= −1 A − − −1 V
f
T
transition frequency I
C
= −50 mA; V
CE
= −10 V;
f
= 100 MHz
150 − − MHz
Schottky barrier diode
V
F
continuous forward voltage I
F
= 10 mA; note 1 − 240 270 mV
I
F
= 100 mA; note 1 − 300 350 mV
I
F
= 1000 mA; see Fig.7; note 1 − 480 550 mV
I
R
reverse current V
R
= 5 V; note 1 − 5 10 µA
V
R
= 8 V; note 1 − 7 20 µA
V
R
= 15 V; see Fig.8; note 1 − 10 50 µA
C
d
diode capacitance V
R
= 5 V; f = 1 MHz; see Fig.9 − 19 25 pF
