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IRLB8314PBF

P1-P3P4-P6P7-P9
HEXFET
®
Power MOSFET
D
S
G
TO-220AB
G D S
Gate Drain Source
Application
Optimized for UPS/Inverter Applications
Low Voltage Power Tools
Benefits
Best in Class Performance for UPS/Inverter Applications
Very Low RDS(on) at 4.5V VGS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage and Current
Lead-Free, RoHS Compliant
Base part number Package Type
Standard Pack
Form Quantity
IRLB8314PbF TO-220AB Tube 50 IRLB8314PbF
Orderable Part Number
S
D
G
Absolute Maximium Rating
Symbol Parameter Max. Units
V
GS
Gate-to-Source Voltage ± 20 V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 171
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 120
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited) 130
I
DM
Pulsed Drain Current  664
P
D
@T
C
= 25°C Maximum Power Dissipation 125 W
P
D
@T
C
= 100°C Maximum Power Dissipation 63 W
Linear Derating Factor 0.83 W/°C
T
J
T
STG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case 
––– 1.2
°C/W
R
CS
Case-to-Sink, Flat Greased Surface
0.50 –––
R
JA
Junction-to-Ambient
––– 62
A
Notes through are on page 8
V
DSS
30 V
R
DS(on)
max
(@ V
GS
= 10V)
2.4
m
(@ V
GS
= 4.5V)
3.2
Qg
(typical)
40 nC
I
D (Silicon Limited)
171
I
D (Package Limited)
130A
A
IRLB8314PbF
1 2016-08-04
IRLB8314PbF
2 2016-08-04
Static @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V V
GS
= 0V, I
D
= 250µA
BV
DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 14 ––– mV/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
––– 1.9 2.4
m
V
GS
= 10V, I
D
= 68A
––– 2.6 3.2 V
GS
= 4.5V, I
D
= 68A
V
GS(th)
Gate Threshold Voltage 1.2 1.7 2.2 V
V
DS
= V
GS
, I
D
= 100µA
V
GS(th)
/T
J
Gate Threshold Voltage Coefficient ––– -7.0 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current
––– ––– 1.0
µA
V
DS
=24 V, V
GS
= 0V
––– ––– 150 V
DS
=24V,V
GS
= 0V,T
J
=125°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -20V
gfs Forward Transconductance 307 ––– ––– S V
DS
= 15V, I
D
=68A
Q
g
Total Gate Charge ––– 40 60
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 6.8 –––
V
DS
= 15V
Q
gs2
Post-Vth Gate-to-Source Charge ––– 13 –––
nC V
GS
= 4.5V
Q
gd
Gate-to-Drain Charge ––– 8.7 –––
I
D
= 68A
Q
godr
Gate Charge Overdrive ––– 11.5 –––
Q
sw
Switch Charge (Qgs2 + Qgd) 21.7
R
G
Gate Resistance ––– 1.7 –––

t
d(on)
Turn-On Delay Time ––– 19 –––
V
DD
= 15V
t
r
Rise Time ––– 142 –––
ns I
D
= 68A
t
d(off)
Turn-Off Delay Time ––– 32 –––
R
G
= 1.8
t
f
Fall Time ––– 72 –––
V
GS
= 4.5V
C
iss
Input Capacitance ––– 5050 –––
V
GS
= 0V
C
oss
Output Capacitance ––– 890 –––
pF V
DS
= 15V
C
rss
Reverse Transfer Capacitance ––– 500 –––
ƒ = 1.0MHz
Static Drain-to-Source On-Resistance
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy 
180
mJ
E
AS (tested)
Single Pulse Avalanche Energy Tested Value 
900
I
AR
Avalanche Current 68 A
E
AR
Repetitive Avalanche Energy mJ 12.5
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
––– ––– 171
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 664
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.0 V T
J
= 25°C,I
S
= 68A,V
GS
= 0V 
t
rr
Reverse Recovery Time ––– 21 31 ns
T
J
= 25°C I
F
= 68A ,V
DD
=15V
Q
rr
Reverse Recovery Charge ––– 54 81 nC
di/dt = 430A/µs 
IRLB8314PbF
3 2016-08-04
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
60µs PULSE WIDTH
Tj = 25°C
2.8V
VGS
TOP 10V
5.5V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.8V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
60µs PULSE WIDTH
Tj = 175°C
2.8V
VGS
TOP 10V
5.5V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.8V
1.0 2.0 3.0 4.0 5.0 6.0 7.0
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
V
DS
= 15V
60µs PULSE WIDTH
T
J
= 25°C
T
J
= 175°C
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T
J
, Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 120A
V
GS
= 10V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0 20 40 60 80 100 120
Q
G
Total Gate Charge (nC)
0
2
4
6
8
10
12
14
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 24V
V
DS
= 15V
I
D
= 68A
P1-P3P4-P6P7-P9

IRLB8314PBF

Mfr. #:
Buy IRLB8314PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET TRENCH_MOSFETS
Lifecycle:
New from this manufacturer.
Delivery:
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