IRLB8314PbF
4 2016-08-04
Fig 8. Maximum Safe Operating Area
Fig 10. Threshold Voltage vs. Temperature
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
0.0 0.5 1.0 1.5 2.0 2.5
V
SD
, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
in
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
GS
= 0V
25 50 75 100 125 150 175
T
C
, Case Temperature (°C)
0
20
40
60
80
100
120
140
160
180
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Limited By Package
-75 -50 -25 0 25 50 75 100 125 150 175
T
J
, Temperature ( °C )
0.5
1.0
1.5
2.0
2.5
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 100µA
I
D
= 250µA
I
D
= 1.0mA
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
T
h
e
r
ma
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
°
C
/
W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1 1 10 100
V
DS
, Drain-toSource Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
100µsec
DC
L
imited by
Package
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
