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TISP4290M3AJR-S

P1-P3P4-P6P7-P9P10-P12
AUGUST 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxM3AJ Overvoltage Protector Series
TISP4070M3AJ THRU TISP4115M3AJ,
TISP4125M3AJ THRU TISP4220M3AJ,
TISP4240M3AJ THRU TISP4395M3AJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Device Symbol
4 kV 10/700, 100 A 5/310 ITU-T K.20/21 rating
SMA (DO-214AC) Package
25% Smaller Placement Area than SMB
Low Differential Capacitance ........................................... 39 pF
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
SMAJ Package (Top View)
Rated for International Surge Wave Shapes
Device
V
DRM
V
V
(BO)
V
‘4070 58 70
‘4080 65 80
‘4090 68 90
‘4095 75 95
‘4115 90 115
‘4125 100 125
‘4145 120 145
‘4165 135 165
‘4180 145 180
‘4200 155 200
‘4220 160 220
‘4240 180 240
‘4250 190 250
‘4265 200 265
‘4290 220 290
‘4300 230 300
‘4320 240 320
‘4350 275 350
‘4360 290 360
‘4395 320 395
MDXXCCE
12R (B) T (A)
Description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as
the diverted current subsides.
How To Order
T
R
SD4XAA
T
erminals T and R correspond to the
alternative line designators of A and B
Wave Shape Standard
I
TSP
A
2/10 µs GR-1089-CORE 300
8/20 µs IEC 61000-4-5 220
10/160 µs FCC Part 68 120
10/700 µs ITU-T K.20/21/45 100
10/560 µs FCC Part 68 75
10/1000 µs GR-1089-CORE 50
............................................ UL Recognized Components
Device Package Carrier
TISP4xxxM3AJ AJ (J-Bend DO-214AC/SMA)
Embossed Tape Reeled TISP4xxxM3AJR-S
Insert xxx value corresponding to protection voltages of 070, 080, 095, etc.
Order As
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
*
R
o
H
S
C
O
M
P
L
I
A
N
T
AUGUST 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
The TISP4xxxM3AJ range consists of twenty voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These medium (M) current protection
devices are in a plastic package SMAJ (JEDEC DO-214AC with J-bend leads) and supplied in embossed tape reel pack. For alternative
voltage and holding current values, consult the factory. For higher rated impulse currents, the 100 A 10/1000 TISP4xxxH3BJ series in the SMB
(JEDEC DO-214AA) package is available.
TISP4xxxM3AJ Overvoltage Protector Series
Description (continued)
Absolute Maximum Ratings, T
A
= 25 °C (Unless Otherwise Noted)
Rating Symbol Value Unit
Repetitive peak off-state voltage, (see Note 1)
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4360
‘4395
V
DRM
± 58
± 65
‘4090 ± 68
± 75
± 90
±100
±120
±135
±145
±155
±160
±180
±190
±200
±220
±230
‘4320 ±240
±275
±290
±320
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
I
TSP
A
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 300
8/20 µs (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 220
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 120
5/200 µs (VDE 0433, 10/700 µs voltage wave shape) 110
0.2/310 µs (I3124, 0.5/700 µs voltage wave shape) 100
5/310 µs (ITU-T K.20/21/45, K.44 10/700 µs voltage wave shape) 100
5/310 µs (FTZ R12, 10/700 µs voltage wave shape) 100
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 75
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) 50
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
I
TSM
23
24
1.6
A
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 100 A di
T
/dt 300 A/µs
Junction temperature T
J
-40 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures.
2. Initially, the TISP4xxxM3AJ must be in thermal equilibrium with T
J
=25°C.
3. The surge may be repeated after the TISP4xxxM3AJ returns to its initial conditions.
4. See Applications Information and Figure 11 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 9 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient temperatures
above 25 °
C.
AUGUST 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxM3AJ Overvoltage Protector Series
Electrical Characteristics, T
A
= 25 °C (Unless Otherwise Noted)
Parameter Test Conditions Min Typ Max Unit
I
DRM
Repetitive peak off-
state current
V
D
= V
DRM
T
A
= 25 °C
T
A
= 85 °C
±5
±10
µA
V
(BO)
Breakover voltage dv/dt = ±250 V/ms, R
SOURCE
= 300
Ω
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4360
‘4395
±70
±80
‘4090
±90
±95
±115
±125
±145
±165
±180
±200
±220
±240
±250
±265
±290
±300
‘4320
±320
±350
±360
±395
V
V
(BO)
Impulse breakover
voltage
dv/dt
≤
±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4360
‘4395
±78
±88
‘4090
±98
±102
±122
±132
±151
±171
±186
±207
±227
±247
±257
±272
±298
±308
‘4320
±328
±359
±370
±405
V
I
(BO)
Breakover current dv/dt = ±250 V/ms, R
SOURCE
= 300
Ω
±0.15 ±0.6 A
V
T
On-state voltage I
T
= ±5A, t
W
= 100 µs ±3V
I
H
Holding current I
T
= ±5A, di/dt=+/-30mA/ms ±0.15 ±0.35 A
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
±5 kV/µs
P1-P3P4-P6P7-P9P10-P12

TISP4290M3AJR-S

Mfr. #:
Buy TISP4290M3AJR-S
Manufacturer:
Bourns
Description:
Thyristor Surge Protection Devices (TSPD) BIDIRECTIONAL PRTCTR 220volts
Lifecycle:
New from this manufacturer.
Delivery:
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