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BGA622H6820XTSA1

P1-P3P4-P6P7-P9P10-P12
Data Sheet 10 Rev. 2.2, 2008-04-14
BGA622
Measured Parameters
Stability K, B
1
= f(f)
V
CC
= 2.75V, I
tot−on
= 5.8mA
0 1 2 3 4 5 6
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Frequency [GHz]
K, B
1
K
B1
Noise Figure F = f(f)
V
CC
= 2.75V, I
tot−on
= 5.8mA, Z
S
= 50Ω
0 0.5 1 1.5 2 2.5 3
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
Frequency [GHz]
F [dB]
Input Compression Point P
−1dB
= f(V
CC
)
f = 2.14GHz, T
A
= parameter in °C
2.6 2.8 3 3.2 3.4
−14
−13.5
−13
−12.5
−12
−11.5
−11
−10.5
V
CC
[V]
P
−1dB
[dBm]
85
20
−40
Device Current I
tot−on
= f(T
A
, V
CC
)
V
CC
= parameter in V
−40 −20 0 20 40 60 80
5
5.5
6
6.5
7
7.5
8
8.5
T
A
[°C]
I
tot−on
[mA]
2.6
2.8
3
3.2
3.4
BGA622
Measured Parameters
Data Sheet 11 Rev. 2.2, 2008-04-14
Device Current I
tot−on
= f(V
CC
, T
A
)
T
A
= parameter in °C
2.6 2.8 3 3.2 3.4
5
5.5
6
6.5
7
7.5
8
8.5
V
CC
[V]
I
tot−on
[mA]
−40
20
85
Power Gain |S
21
|
2
= f(T
A
, V
CC
)
f = 2.14GHz, V
CC
= parameter in V
−40 −20 0 20 40 60 80
12.5
13
13.5
14
14.5
15
T
A
[°C]
|S
21
|
2
[dB]
2.6
3
3.4
Power Gain |S
21
|
2
= f(V
CC
, T
A
)
f = 2.14GHz, T
A
= parameter in °C
2.6 2.8 3 3.2 3.4
12.5
13
13.5
14
14.5
15
15.5
V
CC
[V]
|S
21
|
2
[dB]
−40
20
85
Data Sheet 12 Rev. 2.2, 2008-04-14
BGA622
Package Information
4 Package Information
Figure 4 Package Outline SOT343
Figure 5 Tape for SOT343
GPS05605
1.25
±0.1
0.1 max
2.1
±0.1
0.15
+0.1
-0.05
0.3
+0.1
±0.1
1.3
2
±0.2
B
±0.1
0.9
12
34
A
+0.1
0.6
acc. to
+0.2
DIN 6784
A
M
0.20
0.20
M
B
0.2
4
2.15
8
2.3
1.1
Pin 1
P1-P3P4-P6P7-P9P10-P12

BGA622H6820XTSA1

Mfr. #:
Buy BGA622H6820XTSA1
Manufacturer:
Infineon Technologies
Description:
RF Amplifier RF SILICON MMIC
Lifecycle:
New from this manufacturer.
Delivery:
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