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BGA622H6820XTSA1

P1-P3P4-P6P7-P9P10-P12
Data Sheet 4 Rev. 2.2, 2008-04-14
BGA622
Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection
1 Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD
Protection
Figure 1 Pin connection
Description
The BGA622 is a wide band low noise amplifier, based on Infineon Technologies’ Silicon Germanium Technology
B7HF. In order to provide the LNA in a small package the out-pin is simultaneously used for RF out and On/Off
switch. This functionality can be accessed using a RF-Choke at the Out pin, where a DC level of 0 V or an open
switches the device on and a DC level of
V
CC
switches the device off. While the device is switched off, it provides
an insertion loss of 24 dB together with a high
IIP
3
up to 20 dBm.
Note: ESD: Electrostatic discharge sensitive device, observe handling precaution
Feature
• High gain
|
S
21
|
2
= 15.0 dB at 1.575 GHz
|
S
21
|
2
= 14.2 dB at 1.9 GHz
|
S
21
|
2
= 13.6 dB at 2.14 GHz
• Low noise figure,
NF = 1.0 dB at 1.575 GHz
• Operating frequency range 0.5 - 6 GHz
• Typical supply voltage: 2.75 V
• On/Off-Switch
• Output-match on chip, input pre-matched
• Low part count
•70GHz
f
T
- Silicon Germanium technology
• 2 kV HBM ESD protection (Pin-to-Pin)
• Pb-free (RoHS compliant) package
SOT343
Applications
• LNA for GSM, GPS, DCS, PCS, UMTS, Bluethooth, ISM and WLAN
Type Package Marking
BGA622 SOT343 BXs
1
2
3
4
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BGA622
Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection
Data Sheet 5 Rev. 2.2, 2008-04-14
Maximum Ratings
Note: All Voltages refer to GND-Node
Thermal resistance
Table 1 Maximum ratings
Parameter Symbol Limit Value Unit
Voltage at pin
V
CC
V
CC
3.5 V
Voltage at pin Out
V
out
4V
Current into pin In
I
in
0.1 mA
Current into pin Out
I
out
1mA
Current into pin
V
CC
I
Vcc
10 mA
RF input power
P
in
6dBm
Total power dissipation,
T
S
< 139 °C
1)
1) T
S
is measured on the ground lead at the soldering point
P
tot
35 mW
Junction temperature
T
J
150 °C
Ambient temperature range
T
A
-65... 150 °C
Storage temperature range
T
STG
-65... 150 °C
ESD capability all pins (HBM: JESD22-A114)
V
ESD
2000 V
Table 2 Thermal resistance
Parameter Symbol Value Unit
Junction - soldering point
1)
1) For calculation of R
thJA
please refer to Application Note Thermal Resistance
R
thJS
300 K/W
Data Sheet 6 Rev. 2.2, 2008-04-14
BGA622
Electrical Characteristics
2 Electrical Characteristics
2.1 Electrical characteristics at T
A
= 25 °C (measured according to Figure 2)
V
CC
= 2.75 V, Frequency = 1.575 GHz, unless otherwise specified
Table 3 Electrical Characteristics
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Insertion power gain
|S
21
|
2
15.0 dB
Insertion power gain (Off-State)
|S
21
|
2
-27 dB
Input return loss (On-State)
RL
in
5dB
Output return loss (On-State)
RL
out
12 dB
Noise figure (
Z
S
= 50 Ω) F
50Ω
1.00 dB f = 0.1 GHz
Input third order intercept point
1)
(On-State)
1) IP
3
values depends on termination of all intermodulation frequency components. Termination used for this measurement
is 50 Ω from 0.1 to 6 GHz
IIP
3
0dBm∆f =1MHz,
P
IN
= -28 dBm
Input third order intercept point
1)
(Off - State)
IIP
3
20 dBm ∆f =1MHz,
P
IN
=-8dBm
Input power at 1 dB gain compression
P
-1dB
-16.5 dBm
Total device off current
I
tot-off
130 260 420 µA V
CC
= 2.75 V,
V
out
= V
CC
Total device on current I
tot-on
4.0 5.8 7.8 mA V
CC
= 2.75 V
On / Off switch control voltage
V
on
00.8VV
CC
= 2.75 V
ON-Mode:
V
out
= V
on
V
off
2.0 3.5 V V
CC
= 2.75 V
OFF-Mode:
V
out
= V
off
P1-P3P4-P6P7-P9P10-P12

BGA622H6820XTSA1

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Manufacturer:
Infineon Technologies
Description:
RF Amplifier RF SILICON MMIC
Lifecycle:
New from this manufacturer.
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