NCR100W-12L
SCR
27 June 2016 Product data sheet
1. General description
Planar passivated SCR with sensitive gate in a SOT223 surface mountable plastic package. This
SCR is designed to be interfaced directly to microcontrollers, logic integrated circuits and other low
power gate trigger circuits.
2. Features and benefits
Sensitive gate
Planar passivated for voltage ruggedness and reliability
Direct triggering from low power drivers and logic ICs
Surface mountable package
3. Applications
Ground Fault Circuit Interrupters (GFCI)
General purpose switching and phase control
Ignition circuits, CDI for 2- and 3-wheelers
Motor control - e.g. small kitchen appliances
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DRM
repetitive peak off-
state voltage
- - 1000 V
V
RRM
repetitive peak reverse
voltage
- - 1000 V
I
T(AV)
average on-state
current
half sine wave; T
sp
≤ 100 °C - - 0.8 A
I
T(RMS)
RMS on-state current half sine wave; T
sp
≤ 100 °C; Fig. 1;
Fig. 2; Fig. 3
- - 1.1 A
I
TSM
non-repetitive peak on-
state current
half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms; Fig. 4; Fig. 5
- - 11 A
Static characteristics
I
GT
gate trigger current V
D
= 12 V; I
T
= 10 mA; T
j
= 25 °C;
Fig. 7
15 - 50 µA
WeEn Semiconductors
NCR100W-12L
SCR
NCR100W-12L All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 27 June 2016 2 / 15
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K cathode
2 A anode
3 G gate
4 A mb; connected to anode
1 32
4
SC-73 (SOT223)
sym037
A K
G
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
NCR100W-12L SC-73 plastic surface-mounted package with increased heatsink; 4
leads
SOT223
7. Marking
Table 4. Marking codes
Type number Marking code
NCR100W-12L 10012L
WeEn Semiconductors
NCR100W-12L
SCR
NCR100W-12L All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 27 June 2016 3 / 15
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state
voltage
- 1000 V
V
RRM
repetitive peak reverse
voltage
- 1000 V
I
T(AV)
average on-state current half sine wave; T
sp
≤ 100 °C - 0.8 A
I
T(RMS)
RMS on-state current half sine wave; T
sp
≤ 100 °C; Fig. 1;
Fig. 2; Fig. 3
- 1.1 A
half sine wave; T
j(init)
= 25 °C; t
p
= 10 ms;
Fig. 4; Fig. 5
- 11 AI
TSM
non-repetitive peak on-
state current
half sine wave; T
j(init)
= 25 °C; t
p
= 8.3 ms - 12.1 A
I
2
t I
2
t for fusing t
p
= 10 ms; SIN - 0.605 A²s
dI
T
/dt rate of rise of on-state
current
I
G
= 0.1 mA - 50 A/µs
I
GM
peak gate current - 1 A
V
RGM
peak reverse gate
voltage
- 5 V
P
GM
peak gate power - 2 W
P
G(AV)
average gate power over any 20 ms period - 0.1 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 125 °C
T
sp
(°C)
-50 1501000 50
aaa-018519
0.4
0.8
1.2
I
T(RMS)
(A)
0
0.2
0.6
1.0
Fig. 1. RMS on-state current as a function of solder
point temperature; maximum values
aaa-018521
1
2
3
I
T(RMS)
(A)
0
surge duration (s)
10
-2
10110
-1
f = 50 Hz; T
sp
= 100 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values

NCR100W-12LX

Mfr. #:
Manufacturer:
WeEn Semiconductors
Description:
SCRs Silicon Controlled Rectifier
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet