WeEn Semiconductors
NCR100W-12L
SCR
NCR100W-12L All information provided in this document is subject to legal disclaimers.
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WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 27 June 2016 3 / 15
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state
voltage
- 1000 V
V
RRM
repetitive peak reverse
voltage
- 1000 V
I
T(AV)
average on-state current half sine wave; T
sp
≤ 100 °C - 0.8 A
I
T(RMS)
RMS on-state current half sine wave; T
sp
≤ 100 °C; Fig. 1;
Fig. 2; Fig. 3
- 1.1 A
half sine wave; T
j(init)
= 25 °C; t
p
= 10 ms;
Fig. 4; Fig. 5
- 11 AI
TSM
non-repetitive peak on-
state current
half sine wave; T
j(init)
= 25 °C; t
p
= 8.3 ms - 12.1 A
I
2
t I
2
t for fusing t
p
= 10 ms; SIN - 0.605 A²s
dI
T
/dt rate of rise of on-state
current
I
G
= 0.1 mA - 50 A/µs
I
GM
peak gate current - 1 A
V
RGM
peak reverse gate
voltage
- 5 V
P
GM
peak gate power - 2 W
P
G(AV)
average gate power over any 20 ms period - 0.1 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 125 °C
T
sp
(°C)
-50 1501000 50
aaa-018519
0.4
0.8
1.2
I
T(RMS)
(A)
0
0.2
0.6
1.0
Fig. 1. RMS on-state current as a function of solder
point temperature; maximum values
aaa-018521
1
2
3
I
T(RMS)
(A)
0
surge duration (s)
10
-2
10110
-1
f = 50 Hz; T
sp
= 100 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values