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NCR100W-12LX

P1-P3P4-P6P7-P9P10-P12P13-P15
WeEn Semiconductors
NCR100W-12L
SCR
NCR100W-12L All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 27 June 2016 7 / 15
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
I
GT
gate trigger current V
D
= 12 V; I
T
= 10 mA; T
j
= 25 °C;
Fig. 7
15 - 50 µA
I
L
latching current V
D
= 12 V; I
G
= 0.5 mA; T
j
= 25 °C;
R
GK(ext)
= 1 kΩ; Fig. 8
- - 6 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; R
GK(ext)
= 1 kΩ;
Fig. 9
- - 3 mA
V
T
on-state voltage I
T
= 1.2 A; T
j
= 25 °C; Fig. 10 - 1.25 1.7 V
V
D
= 12 V; I
T
= 10 mA; T
j
= 25 °C;
Fig. 11
- 0.5 0.8 VV
GT
gate trigger voltage
V
D
= 1000 V; I
T
= 0.1 A; T
j
= 125 °C;
Fig. 11
0.3 0.5 - V
I
D
off-state current V
D
= 1000 V; R
GK(ext)
= 1 kΩ;
T
j
= 125 °C
- 0.05 1 mA
I
R
reverse current V
R
= 1000 V; T
j
= 125 °C;
R
GK(ext)
= 1 kΩ
- 0.05 1 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 670 V; T
j
= 125 °C; R
GK
= 1 kΩ;
exponential waveform; (V
DM
= 67% of
V
DRM
)
100 - - V/µs
t
gt
gate-controlled turn-on
time
I
TM
= 2 A; V
D
= 1000 V; I
G
= 10 mA;
dI
G
/dt = 0.1 A/µs; T
j
= 25 °C
- 2 - µs
t
q
commutated turn-off
time
V
DM
= 670 V; T
j
= 125 °C; I
TM
= 1.6 A;
V
R
= 35 V; (dI
T
/dt)
M
= 30 A/µs; dV
D
/
dt = 2 V/µs; R
GK(ext)
= 1 kΩ; (V
DM
=
67% of V
DRM
)
- 100 - µs
WeEn Semiconductors
NCR100W-12L
SCR
NCR100W-12L All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 27 June 2016 8 / 15
T
j
(°C)
-50 1501000 50
001aab502
1
2
3
0
I
GT
I
GT(25°C)
Fig. 7. Normalized gate trigger current as a function of
junction temperature
T
j
(°C)
-50 1501000 50
001aab503
1
2
3
0
I
L
I
L(25°C)
R
GK
= 1 kΩ
Fig. 8. Normalized latching current as a function of
junction temperature
T
j
(°C)
-50 1501000 50
001aab504
1
2
3
0
I
H
I
H(25°C)
R
GK
= 1 kΩ
Fig. 9. Normalized holding current as a function of
junction temperature
aaa-015825
V
T
(V)
0 321
2
3
1
4
5
I
T
(A)
0
(1) (2)
(3)
V
o
= 1.289 V; R
s
= 0.292 Ω
(1) T
j
= 125 °C; typical values
(2) T
j
= 125 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 10. On-state current as a function of on-state
voltage
WeEn Semiconductors
NCR100W-12L
SCR
NCR100W-12L All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 27 June 2016 9 / 15
T
j
(°C)
-50 1501000 50
001aab501
0.8
1.2
1.6
0.4
V
GT
V
GT(25°C)
Fig. 11. Normalized gate trigger voltage as a function of junction temperature
P1-P3P4-P6P7-P9P10-P12P13-P15

NCR100W-12LX

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Manufacturer:
WeEn Semiconductors
Description:
SCRs Silicon Controlled Rectifier
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New from this manufacturer.
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