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MUBW45-12T6K

P1-P3P4-P6
© 2013 IXYS All rights reserved
1 - 6
20130626c
MUBW45-12T6K
IXYS reserves the right to change limits, test conditions and dimensions.
Preliminary data
Converter - Brake - Inverter
Module
(CBI 1)
Trench IGBT
Three Phase
Rectifier
Brake
Chopper
Three Phase
Inverter
V
RRM
= 1600 V V
CES
= 1200 V V
CES
= 1200 V
I
DAVM25
= 151 A I
C25
= 19 A I
C25
= 43 A
I
FSM
= 320 A V
CE(sat)
= 2.9 V V
CE(sat)
= 2.5 V
Pin configuration see outlines.
Application:
AC motor drives with
• Input from single or three phase grid
• Three phase synchronous or
asynchronous motor
• Electric braking operation
Features:
• High level of integration - only one
power semiconductor module required
for the whole drive
• Inverter with Trench IGBTs
- low saturation voltage
- positive temperature coefficient
- fast switching
- short tail current
• Epitaxial free wheeling diodes with
hiperfast and soft reverse recovery
• Industry standard package with insu
lated copper base plate and soldering
pins for PCB mounting
• Temperature sense included
Package:
• UL registered
• Industry standard E1-pack
Part name (Marking on product)
MUBW45-12T6K
E72873
© 2013 IXYS All rights reserved
2 - 6
20130626c
MUBW45-12T6K
IXYS reserves the right to change limits, test conditions and dimensions.
Ouput Inverter T1 - T6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
CES
collector emitter voltage
T
VJ
= 25°C to 150°C 1200 V
V
GES
V
GEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
V
I
C25
I
C80
collector current
T
C
= 25°C
T
C
= 80°C
43
31
A
A
P
tot
total power dissipation
T
C
= 25°C 160 W
V
CE(sat)
collector emitter saturation voltage
I
C
= 45 A; V
GE
= 15 V T
VJ
= 25°C
T
VJ
= 125°C
2.5
3.2
3.1 V
V
V
GE(th)
gate emitter threshold voltage
I
C
= 1 mA; V
GE
= V
CE
T
VJ
= 25°C 5 6.5 V
I
CES
collector emitter leakage current
V
CE
= V
CES
; V
GE
= 0 V T
VJ
= 25°C
T
VJ
= 125°C
1.0
1.5
1.25 mA
mA
I
GES
gate emitter leakage current
V
CE
= 0 V; V
GE
= ±20 V 400 nA
C
ies
input capacitance
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz 1810 pF
Q
G(on)
total gate charge
V
CE
= 600 V; V
GE
= 15 V; I
C
= 25 A 240 nC
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load T
VJ
= 125°C
V
CE
= 600 V; I
C
= 25 A
V
GE
= ±15 V; R
G
= 36 Ω
90
50
520
90
2.5
3.4
ns
ns
ns
ns
mJ
mJ
I
CM
reverse bias safe operating area
RBSOA; V
GE
= ±15 V; R
G
= 36 Ω
L = 100 μH;
clamped induct. load
T
VJ
= 125°C
V
CEmax
= V
CES
- L
S
·di/dt
50 A
t
SC
(SCSOA)
short circuit safe operating area
V
CE
= 900 V; V
GE
= ±15 V; T
VJ
= 125°C
R
G
= 36 Ω; non-repetitive
10 μs
R
thJC
thermal resistance junction to case
(per IGBT) 0.8 K/W
R
thCH
thermal resistance case to heatsink
(per IGBT) 0.3 K/W
Output Inverter D1 - D6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
RRM
max. repetitve reverse voltage
T
VJ
= 150°C 1200 V
I
F25
I
F80
forward current
T
C
= 25°C
T
C
= 80°C
49
32
A
A
V
F
forward voltage
I
F
= 45 A; V
GE
= 0 V T
VJ
= 25°C
T
VJ
= 125°C
3.1
2.3
V
V
I
RM
t
rr
E
rec(off)
max. reverse recovery current
reverse recovery time
reverse recovery energy
V
R
= 600 V
di
F
/dt = -1700 A/μs T
VJ
= 100°C
I
F
= 30 A; V
GE
= 0 V
51
180
1.8
A
ns
μJ
R
thJC
thermal resistance junction to case
(per diode) 0.9 K/W
R
thCH
thermal resistance case to heatsink
(per diode) 0.3 K/W
T
C
= 25°C unless otherwise stated
© 2013 IXYS All rights reserved
3 - 6
20130626c
MUBW45-12T6K
IXYS reserves the right to change limits, test conditions and dimensions.
Brake Chopper T7
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
CES
collector emitter voltage
T
VJ
= 25°C to 150°C 1200 V
V
GES
V
GEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
V
I
C25
I
C80
collector current
T
C
= 25°C
T
C
= 80°C
19
13
A
A
P
tot
total power dissipation
T
C
= 25°C 90 W
V
CE(sat)
collector emitter saturation voltage
I
C
= 15 A; V
GE
= 15 V T
VJ
= 25°C
T
VJ
= 125°C
2.9
3.5
3.4 V
V
V
GE(th)
gate emitter threshold voltage
I
C
= 0.4 mA; V
GE
= V
CE
T
VJ
= 25°C 4.5 6.5 V
I
CES
collector emitter leakage current
V
CE
= V
CES
; V
GE
= 0 V T
VJ
= 25°C
T
VJ
= 125°C 0.8
0.5 mA
mA
I
GES
gate emitter leakage current
V
CE
= 0 V; V
GE
= ±20 V 100 nA
C
ies
input capacitance
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz 600 pF
Q
G(on)
total gate charge
V
CE
= 600 V; V
GE
= 15 V; I
C
= 10 A 45 nC
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load T
VJ
= 125°C
V
CE
= 600 V; I
C
= 10 A
V
GE
= ±15 V; R
G
= 82 Ω
45
40
290
60
1.2
1.1
ns
ns
ns
ns
mJ
mJ
I
CM
reverse bias safe operating area
RBSOA; V
GE
= ±15 V; R
G
= 82 Ω
L = 100 μH;
clamped induct. load
T
VJ
= 125°C
V
CEmax
= V
CES
- L
S
·di/dt
20 A
t
SC
(SCSOA)
short circuit safe operating area
V
CE
= 720 V; V
GE
= ±15 V; T
VJ
= 125°C
R
G
= 82 Ω; non-repetitive
10 μs
R
thJC
thermal resistance junction to case
(per IGBT) 1.35 K/W
R
thCH
thermal resistance case to heatsink
(per IGBT) 0.405 K/W
Brake Chopper D7
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
RRM
max. repetitive reverse voltage
T
VJ
= 150°C 1200 V
I
F25
I
F80
forward current
T
C
= 25°C
T
C
= 80°C
15
10
A
A
V
F
forward voltage
I
F
= 15 A; V
GE
= 0 V T
VJ
= 25°C
T
VJ
= 125°C 2.0
3.5 V
V
I
R
reverse current
V
R
= V
RRM
T
VJ
= 25°C
T
VJ
= 125°C 0.2
0.06 mA
mA
I
RM
t
rr
max. reverse recovery current
reverse recovery time
V
R
= 600 V; I
F
= 10 A
di
F
/dt = -400 A/μs T
VJ
= 100°C
13
110
A
ns
R
thJC
thermal resistance junction to case
(per diode) 2.5 K/W
R
thCH
thermal resistance case to heatsink
(per diode) 0.85 K/W
T
C
= 25°C unless otherwise stated
P1-P3P4-P6

MUBW45-12T6K

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Description:
MODULE IGBT CBI E1
Lifecycle:
New from this manufacturer.
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