© 2013 IXYS All rights reserved
4 - 6
20130626c
MUBW45-12T6K
IXYS reserves the right to change limits, test conditions and dimensions.
Temperature Sensor NTC
Ratings
Symbol Definitions Conditions min. typ. max. Unit
R
25
B
25/85
resistance
T
C
= 25°C 4.45 4.7
3510
5.0 kΩ
K
Module
Ratings
Symbol Definitions Conditions min. typ. max. Unit
T
VJ
T
VJM
T
stg
operating temperature
max. virtual junction temperature
storage temperature
-40
-40
125
150
125
°C
°C
°C
V
ISOL
isolation voltage
I
ISOL
< 1 mA; 50/60 Hz 2500 V~
M
d
mounting torque
(M4) 2.0 2.2 Nm
d
S
d
A
creep distance on surface
strike distance through air
12.7
12.7
mm
mm
Weight
40 g
Equivalent Circuits for Simulation
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
0
R
0
rectifier diode
D8 - D13 T
VJ
= 125°C 0.90
9
V
mΩ
V
0
R
0
IGBT
T1 - T6 T
VJ
= 125°C 0.95
43
V
mΩ
V
0
R
0
free wheeling diode
D1 - D6 T
VJ
= 125°C 1.5
14
V
mΩ
V
0
R
0
IGBT T7 T
VJ
= 125°C 1.5
120
V
mΩ
V
0
R
0
free wheeling diode D7 T
VJ
= 125°C 1.46
63
V
mΩ
I
V
0
R
0
T
C
= 25°C unless otherwise stated
Input Rectifier Bridge D8 - D13
Symbol
Definitions Conditions
Maximum Ratings
V
RRM
max. repetitive reverse voltage
1600 V
I
FAV
I
DAVM
I
FSM
average forward current
max. average DC output current
max. surge forward current
sine 180° T
C
= 80°C
rectangular; d =
1
/
3
; bridge T
C
= 80°C
t = 10 ms; sine 50 Hz T
C
= 25°C
37
104
320
A
A
A
P
tot
total power dissipation
T
C
= 25°C
110
W
Symbol Conditions Characteristic Values
min. typ. max.
V
F
forward voltage
I
F
= 45 A T
VJ
= 25°C
T
VJ
= 125°C
1.41
1.38
V
V
I
R
reverse current
V
R
= V
RRM
T
VJ
= 25°C
T
VJ
= 125°C 0.4
0.02 mA
mA
R
thJC
thermal resistance junction to case
(per diode) T
VJ
= 25°C 1.1 K/W
R
thCH
thermal resistance case to heatsink
(per diode) 0.35 K/W
