MRF5S19130HR5 Datasheet MRF5S19130HR5, MRF5S19130HR3, MRF5S19130HSR3 | P1-P3

HIVE INF

RMATI

ARCHIVE INFORMATION

MRF5S19130HR3 MRF5S19130HSR3

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement - Mode Lateral MOSFETs

Designed for PCN and PCS base station applications at frequencies from

1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

applications.

• Typical 2-Carrier N-CDMA Performance for V

= 28 Volts, I

1200 mA, P

out

= 26 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot,

Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =

1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 13 dB

Drain Efficiency — 25%

IM3 @ 2.5 MHz Offset — -37 dBc in 1.2288 MHz Bandwidth

ACPR @ 885 kHz Offset — -51 dB in 30 kHz Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 110 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V Operation

• Integrated ESD Protection

• Lower Thermal Resistance Package

• Low Gold Plating Thickness on Leads, 40

µ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage V

DSS

-0.5, +65 Vdc

Gate-Source Voltage V

-0.5, +15 Vdc

Total Device Dissipation @ T

= 25°C

Derate above 25°C

438

2.50

W/°C

Storage Temperature Range T

stg

- 65 to +150 °C

Case Operating Temperature T

150 °C

Operating Junction Temperature T

200 °C

CW Operation @ T

= 25°C

Derate above 25°C

CW 160

W/°C

Table 2. Thermal Characteristics

Characteristic Symbol Value

(1,2)

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 115 W CW

Case Temperature 78°C, 26 W CW

0.40

0.46

°C/W

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

Document Number: MRF5S19130H

Rev. 2, 5/2006

Freescale Semiconductor

Technical Data

MRF5S19130HR3

MRF5S19130HSR3

1930 - 1990 MHz, 26 W AVG., 28 V

2 x N-CDMA

LATERAL N - CHANNEL

RF POWER MOSFETs

CASE 465C-02, STYLE 1

NI-880S

MRF5S19130HSR3

CASE 465B-03, STYLE 1

NI-880

MRF5S19130HR3

HIVE INF

RMATI

ARCHIVE INFORMATION

RF Device Data

Freescale Semiconductor

MRF5S19130HR3 MRF5S19130HSR3

Table 3. ESD Protection Characteristics

Test Conditions Class

Human Body Model 2 (Minimum)

Machine Model M4 (Minimum)

Charge Device Model C7 (Minimum)

Table 4. Electrical Characteristics (T

= 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

= 65 Vdc, V

= 0 Vdc)

DSS

— — 10 µAdc

Zero Gate Voltage Drain Leakage Current

= 28 Vdc, V

= 0 Vdc)

DSS

— — 1 µAdc

Gate-Source Leakage Current

= 5 Vdc, V

= 0 Vdc)

GSS

— — 1 µAdc

On Characteristics

Gate Threshold Voltage

= 10 Vdc, I

= 200 µAdc)

GS(th)

2.5 2.8 3.5 Vdc

Gate Quiescent Voltage

= 28 Vdc, I

= 1200 mAdc)

GS(Q)

— 3.8 — Vdc

Drain-Source On -Voltage

= 10 Vdc, I

= 3 Adc)

DS(on)

— 0.26 — Vdc

Forward Transconductance

= 10 Vdc, I

= 3 Adc)

— 7.5 — S

Dynamic Characteristics

Reverse Transfer Capacitance

(1)

= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V

= 0 Vdc)

rss

— 2.7 — pF

Functional Tests (In Freescale Test Fixture, 50 ohm system) V

= 28 Vdc, I

= 1200 mA, P

out

= 26 W Avg., f1 = 1930 MHz,

f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in

30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @

0.01% Probability on CCDF.

Power Gain G

12 13 — dB

Drain Efficiency η

23 25 — %

Intermodulation Distortion IM3 — -37 -35 dBc

Adjacent Channel Power Ratio ACPR — -51 -48 dBc

Input Return Loss IRL — -15 -9 dB

1. Part internally matched both on input and output.

HIVE INF

RMATI

ARCHIVE INFORMATION

MRF5S19130HR3 MRF5S19130HSR3

RF Device Data

Freescale Semiconductor

Figure 1. MRF5S19130HR3(SR3) Test Circuit Schematic

Z13, Z14 1.125″ x 0.068″ Microstrip

Z15 0.071″ x 1.080″ Microstrip

Z16 0.060″ x 1.080″ Microstrip

Z17 0.290″ x 1.080″ Microstrip

Z18 1.075″ x 0.825″ x 0.125″ Taper

Z19 0.635″ x 0.120″ Microstrip

Z20 0.185″ x 0.096″ Microstrip

Z21 0.414″ x 0.084″ Microstrip

Z22 0.040″ x 0.084″ Microstrip

Z23 0.199″ x 0.057″ Microstrip

PCB Arlon GX0300-55-22, 0.03″, ε

= 2.55

Z1 0.200″ x 0.085″ Microstrip

Z2 0.170″ x 0.085″ Microstrip

Z3 0.480″ x 0.085″ Microstrip

Z4 0.926″ x 0.085″ Microstrip

Z5 0.590″ x 0.085″ Microstrip

Z6 0.519″ x 0.955″ x 0.160″ Taper

Z7 0.022″ x 0.955″ Microstrip

Z8 0.046″ x 0.955″ Microstrip

Z9 0.080″ x 0.955″ Microstrip

Z10, Z11 1.280″ x 0.046″ Microstrip

Z12 0.053″ x 1.080″ Microstrip

BIAS

SUPPLY

C24C19C17

C15

OUTPUT

INPUT

Z1 Z2 Z4 Z5 Z6

Z10

Z13

Z16 Z17

DUT

C10

C23C21

C25

Z12 Z22

C6 C7

Z11

C11

C12 C14

C13

C16 C18 C20 C22

C30C29 C32C31

C27 C28

C33 C34C26

Z14

Z7 Z8

Z15 Z23 Z24Z18 Z19 Z20 Z21

+ +

Table 5. MRF5S19130HR3(SR3) Test Circuit Component Designations and Values

Part Description Part Number Manufacturer

B1, B2 Short RF Bead 95F786 Newark

C1 0.8 pF Chip Capacitor 100B0R8BP 500X ATC

C2, C4 0.6 – 4.5 pF Gigatrim Variable Capacitors 44F3358 Newark

C3 2.2 pF Chip Capacitor 100B2R2BP 500X ATC

C5 1.7 pF Chip Capacitor 100B1R7BP 500X ATC

C8, C13 9.1 pF Chip Capacitors 100B9R1CP 500X ATC

C9, C11 1 µF, 25 V Tantalum Capacitors 92F1845 Newark

C10 47 µF, 50 V Electrolytic Capacitor 51F2913 Newark

C6, C14, C17, C18, C19, C28, C29, C30 0.1 µF Chip Capacitors CDR33BX104AKWS Kemet

C7, C12, C16, C27 1000 pF Chip Capacitors 100B102JP 500X ATC

C15, C26 8.2 pF Chip Capacitors 100B8R2CP 500X ATC

C20, C21, C22, C23, C31, C32, C33, C34 22 µF, 35 V Tantalum Capacitors 92F1853 Newark

C24 470 µF, 63 V Electrolytic Capacitor 95F4579 Newark

C25 6.2 pF Chip Capacitor 100B6R2CP 500X ATC

1 kW Chip Resistor

D5534M07B1K00R Newark

560 kW Chip Resistor

CR1206 564JT Newark

R3, R4

12 W Chip Resistors

RM73B2B120JT Garrett Electtonics

P1-P3 P4-P6 P7-P9

MRF5S19130HR5

Mfr. #:

Buy MRF5S19130HR5

Manufacturer:

NXP / Freescale

Description:

RF MOSFET Transistors HV5 28V 26W WCDMA NI880H

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

MRF5S19130HR5

MRF5S19130HR5

Products related to this Datasheet